公开(公告)号：US20240172475A1

公开(公告)日：2024-05-23

申请号：US18381169

申请日：2023-10-17

Applicant: HANNSTAR DISPLAY CORPORATION

Inventor： Li-Fang Chiu ,  Ching-Chieh Lee ,  Chien-Hung Wu

IPC: H10K59/12 ,  C09K13/04 ,  H10K71/20

CPC classification number: H10K59/1201 ,  C09K13/04 ,  H10K71/231

Abstract: The invention discloses an etching solution and a manufacturing method of a display panel. The method includes following steps: providing a first substrate; forming a conductive layer stack including a first sub-layer, a second sub-layer and a third sub-layer, each of the first sub-layer and the second sub-layer includes a transparent conductive material including indium-containing oxide, the third sub-layer is disposed between the first sub-layer and the second sub-layer, and the third sub-layer includes silver or silver alloy; performing an etching process, an etching solution is used to etch the first sub-layer, the second sub-layer and the third sub-layer to form a first patterned sub-layer, a second patterned sub-layer and a third patterned sub-layer, and the etching solution includes 1 to 2.6 wt % of nitric acid, 35 to 45 wt % of acetic acid, 35 to 45 wt % of phosphoric acid and a remaining amount of water.

公开(公告)号：US12117699B1

公开(公告)日：2024-10-15

申请号：US18637483

申请日：2024-04-17

Applicant: HANNSTAR DISPLAY CORPORATION

Inventor： Li-Fang Chiu ,  Ching-Chieh Lee ,  Chun-Chieh Wang

IPC: G02F1/1333 ,  G02F1/1335 ,  G02F1/1337 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368

CPC classification number: G02F1/13439 ,  G02F1/133792 ,  G02F1/1333 ,  G02F1/133553 ,  G02F1/136227 ,  G02F1/1368

Abstract: This invention discloses an etching solution and a manufacturing method of a display panel. The method includes following steps: providing a substrate; forming a conductive layer stack including a first sub-layer, a second sub-layer and a third sub-layer on the substrate, the first sub-layer includes molybdenum, the second sub-layer is disposed on the first sub-layer and includes a transparent conductive material including indium-containing oxide, the third sub-layer is disposed between the first sub-layer and the second sub-layer and includes silver or silver alloy; performing an etching process, the first sub-layer, the second sub-layer and the third sub-layer are etched by an etching solution to form a first patterned sub-layer, a second patterned sub-layer and a third patterned sub-layer. The etching solution includes 1 to 3 wt % of nitric acid, 30 to 50 wt % of acetic acid, 30 to 50 wt % of phosphoric acid and a remaining amount of water.