公开(公告)号：US20200273717A1

公开(公告)日：2020-08-27

申请号：US16800689

申请日：2020-02-25

Applicant: HARBIN INSTITUTE OF TECHNOLOGY

Inventor： BING DAI ,  JIWEN ZHAO ,  JIAQI ZHU ,  LEI YANG ,  WENXIN CAO ,  KANG LIU ,  JIECAI HAN ,  GUOYANG SHU ,  GE GAO ,  KAILI YAO ,  BENJIAN LIU

IPC: H01L21/48 ,  H01L21/02

Abstract: Direct growth methods for preparing diamond-assisted heat-dissipation silicon carbide substrates of GaN-HEMTs are disclosed. In an embodiment, the direct growth method includes the following steps: (1) etching holes in a surface of a silicon carbide substrate to produce a silicon carbide wafer; (2) ultrasonic cleaning the produced silicon carbide wafer; (3) establishing an auxiliary nucleation point on a surface of the silicon carbide wafer; (4) depositing a diamond layer; (5) removing the portion of the diamond layer on the upper surface while retaining the portion of the diamond layer in the holes; (6) ultrasonic cleaning; and (7) depositing diamond in the holes on the silicon carbide wafer until the holes are fully filled.