公开(公告)号：US12052920B1

公开(公告)日：2024-07-30

申请号：US18533907

申请日：2023-12-08

Applicant: HARBIN INSTITUTE OF TECHNOLOGY

Inventor： Jiehe Sui ,  Liangjun Xie ,  Zihang Liu ,  Fengkai Guo

IPC: H10N10/01 ,  B22F1/054 ,  B22F3/12 ,  B22F5/00 ,  B22F9/04 ,  H10N10/853

CPC classification number: H10N10/01 ,  B22F1/054 ,  B22F3/12 ,  B22F5/006 ,  B22F9/04 ,  B22F2009/043 ,  B22F2201/11 ,  B22F2201/50 ,  B22F2301/058 ,  B22F2301/10 ,  B22F2301/255 ,  B22F2304/05 ,  H10N10/853

Abstract: The present disclosure provides a preparation method of a contact material with high thermal stability and low contact resistance based on an MgAgSb-based thermoelectric material and relates to the field of the contact materials preparation. The present disclosure aims to solve the problem of failure to achieve long-term stability for the MgAgSb/Mg3Bi2 device due to the fact that a contact material used by MgAgSb is Ag and MgAgSb may easily yield Ag3Sb in an Ag-rich environment at present. The method includes: at step 1, preparing MgCuSb nano-powder; at step 2, preparing MgCu0.1Ag0.87Sb0.99 nano-powder; at step 3, preparing MgCu0.1Ag0.87Sb0.99—Mg3.2Bi1.5Sb0.5 thermoelectric generation device. The present disclosure is applied to preparation of a contact material with high thermal stability and low contact resistance based on an MgAgSb-based thermoelectric material.

公开(公告)号：US20240244973A1

公开(公告)日：2024-07-18

申请号：US18533907

申请日：2023-12-08

Applicant: HARBIN INSTITUTE OF TECHNOLOGY

Inventor： Jiehe SUI ,  Liangjun Xie ,  Zihang Liu ,  Fengkai Guo

IPC: H10N10/01 ,  B22F1/054 ,  B22F3/12 ,  B22F5/00 ,  B22F9/04

CPC classification number: H10N10/01 ,  B22F1/054 ,  B22F3/12 ,  B22F5/006 ,  B22F9/04 ,  H10N10/853

Abstract: The present disclosure provides a preparation method of a contact material with high thermal stability and low contact resistance based on an MgAgSb-based thermoelectric material and relates to the field of the contact materials preparation. The present disclosure aims to solve the problem of failure to achieve long-term stability for the MgAgSb/Mg3Bi2 device due to the fact that a contact material used by MgAgSb is Ag and MgAgSb may easily yield Ag3Sb in an Ag-rich environment at present. The method includes: at step 1, preparing MgCuSb nano-powder; at step 2, preparing MgCu0.1Ag0.87Sb0.99 nano-powder; at step 3, preparing MgCu0.1Ag0.87Sb0.99—Mg3.2Bi1.5Sb0.5 thermoelectric generation device. The present disclosure is applied to preparation of a contact material with high thermal stability and low contact resistance based on an MgAgSb-based thermoelectric material.