公开(公告)号：US11656219B2

公开(公告)日：2023-05-23

申请号：US16624265

申请日：2017-07-07

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Kazuma Matsui ,  Michiru Fujioka ,  Yusuke Goto

IPC: G01N33/487 ,  C12Q1/6869 ,  B82Y5/00

CPC classification number: G01N33/48721 ,  C12Q1/6869 ,  G01N33/48785 ,  B82Y5/00 ,  C12Q2565/631

Abstract: An apparatus for storing a thin film device, the apparatus including: a thin film device 3 having an insulating thin film containing Si and having a thickness of 100 nm or less; a solution in contact with the thin film; and a container having a tank that seals the solution, wherein the solution is a solution that satisfies any of the following conditions (1) to (3).



(1) A solution containing water in a volume ratio of 0% or more to 30% or less
(2) A solution cooled and maintained at a temperature equal to or higher than a solidification point and lower than 15° C.
(3) A solution that contains a salt with a concentration of 1 mol/L or more and a saturation concentration or less and is cooled and maintained to a temperature equal to or higher than a solidification point and lower than 25° C.

公开(公告)号：US11448638B2

公开(公告)日：2022-09-20

申请号：US16476860

申请日：2017-01-10

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Kazuma Matsui ,  Yusuke Goto ,  Rena Akahori ,  Takahide Yokoi ,  Michiru Fujioka

IPC: G01N33/487 ,  G01N27/447

Abstract: Provided are a first tank; a second tank; a thin film having a nanopore, which communicates the first tank to the second tank, and disposed between the first and second tanks; a first electrode provided in the first tank; and a second electrode provided in the second tank. A wall surface of the nanopore has an ion adsorption preventing structure to prevent desorption/adsorption of an ion contained in a solution filling the first tank and/or the second tank, and a voltage is applied between the first and second electrodes to measure an ion current flowing through the nanopore.

公开(公告)号：US11499959B2

公开(公告)日：2022-11-15

申请号：US16463502

申请日：2016-12-09

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yoshimitsu Yanagawa ,  Kenichi Takeda ,  Itaru Yanagi ,  Yusuke Goto ,  Kazuma Matsui

IPC: G01N33/487 ,  B01J19/08 ,  C25F3/12 ,  B81C1/00 ,  G01N33/00 ,  B23H7/20

Abstract: A first modulation voltage is applied to a thin film. An amount of a change in the phase of a current carried through the thin film with respect to the phase of the first modulation voltage is compared with a threshold. Upon detecting that the amount of the change in the phase exceeds the threshold is detected, the application of the first modulation voltage is stopped. Thus, a nanopore is formed on the thin film at high speed.