公开(公告)号：US10783220B2

公开(公告)日：2020-09-22

申请号：US16053158

申请日：2018-08-02

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Seiichi Watanabe ,  Satomi Inoue ,  Shigeru Nakamoto ,  Kousuke Fukuchi

IPC: G06F17/18 ,  H01J37/32 ,  H01L21/66

Abstract: The present invention is a data processing apparatus including a data input/output device for receiving data, a storage for storing the data received by the data input/output device, a data processing program storage for storing a data processing program that includes the steps of calculating, using a double exponential smoothing method, a first predicted value that is a predicted value of smoothed data and a second predicted value that is a predicted value of the gradient of the smoothed data, and calculating, using a double exponential smoothing method in which the second predicted value is set as input data, a third predicted value that is a predicted value of smoothed data and a fourth predicted value that is a predicted value of the gradient of the smoothed data, and a data calculation processing apparatus for performing the data processing under the data processing program.

公开(公告)号：US10453695B2

公开(公告)日：2019-10-22

申请号：US15714181

申请日：2017-09-25

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Soichiro Eto ,  Takeshi Ohmori ,  Tatehito Usui ,  Satomi Inoue

IPC: H01L21/3065 ,  H01J37/244 ,  H01L21/67 ,  H01L21/66 ,  H01J37/32 ,  H01L21/02

Abstract: A plasma processing apparatus processes a film layer to be processed disposed in advance on a surface of a wafer by using a plasma being switched on and off in a processing chamber in predetermined cycles and periods and includes a detection control unit for detecting a processing amount of the film layer on the surface of the wafer. The detection control unit includes a light source unit, a detection unit, and a film thickness/depth calculation unit. This detection control unit detects a plurality of times an amount indicating the intensity of light on a sample surface at predetermined cycles during a period in which the plasma is switched off while the wafer is being processed and detects a processing amount of the film layer on the sample surface by using the detected amount indicating the light intensity.

公开(公告)号：US09257318B2

公开(公告)日：2016-02-09

申请号：US13975612

申请日：2013-08-26

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Michinori Kawaguchi ,  Satomi Inoue ,  Yoshiro Suemitsu ,  Keita Nogi

IPC: G06F7/00 ,  H01L21/677

CPC classification number: H01L21/67745

Abstract: A method for operating a vacuum processing apparatus, the vacuum processing apparatus including: a plurality of cassette stands on which a cassette capable of housing a plurality of wafers therein can be placed; a plurality of vacuum processing vessels each having a processing chamber arranged therein, wherein the wafer is arranged and processed in the processing chamber; and at least one transport robot transporting the wafer on a transport path between either one of the plurality of cassettes and the plurality of vacuum processing vessels, the vacuum processing apparatus sequentially transporting in a predetermined transport order the plurality of wafers from either one of the plurality of cassettes to a predetermined one of the plurality of vacuum processing vessels and processing the plurality of wafers. The method includes a number determining step, a remaining-time determining step and a transport order skip step.

Abstract translation: 一种真空处理装置的操作方法，所述真空处理装置包括：能够放置能够容纳多个晶片的盒的多个盒架; 多个真空处理容器，每个具有布置在其中的处理室，其中所述晶片在所述处理室中被布置和处理; 以及至少一个传送机器人，其将所述晶片传送到所述多个盒中的任一个与所述多个真空处理容器之间的传送路径上，所述真空处理装置以预定的传送顺序依次传送来自所述多个盒中的任一个的多个晶片 将多个真空处理容器中的一个预定的一个放入盒中并处理多个晶片。 该方法包括数字确定步骤，剩余时间确定步骤和传输顺序跳过步骤。

公开(公告)号：US20140216658A1

公开(公告)日：2014-08-07

申请号：US14239192

申请日：2012-08-02

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Shigeharu Minami ,  Satomi Inoue

IPC: H01L21/677

CPC classification number: H01L21/67739 ,  H01L21/67184 ,  H01L21/67201 ,  H01L2221/68304

Abstract: To provide a vacuum processing device (100) capable of reducing a decline in processing throughput, said vacuum processing device (100) is provided with multiple vacuum transport chambers (41) (42) and a lock chamber (31), and transports and performs processing on a wafer to be processed. Said vacuum transport chambers (41) (42): are placed behind an atmosphere transport chamber (21); transport the wafer to be processed therein; and have connected to the perimeter thereof, vacuum processing chambers (61) (62) (63) that use a plasma to process the wafer to be processed. Said lock chamber (31) is placed between an intermediate chamber (32) and the rear surface of the atmosphere transport chamber (21). While being transported between said vacuum transport chambers (41) (42), the wafer to be processed is placed in and stored by said intermediate chamber (32). To one of the multiple vacuum processing chambers (61) (62) (63), by way of the lock chamber (31), said vacuum processing device (100) transports said wafer to be processed, which is stored in a cassette placed on a cassette stand, and processes said wafer to be processed. In the vacuum processing device (100), a dummy wafer storage section is placed within the intermediate chamber (32). Said dummy wafer storage section is placed within a processing chamber (61) (62) (63) when the plasma is formed in the processing chamber (61) (62) (63) and processing is done by the processing chamber (61) (62) (63) using a dummy wafer and a different condition from the first-mentioned processing.

Abstract translation: 为了提供能够减少加工生产量下降的真空处理装置（100），所述真空处理装置（100）具有多个真空输送室（41）（42）和锁定室（31），并且输送和执行 在要处理的晶片上进行处理。 所述真空输送室（41）（42）：放置在大气输送室（21）的后面; 运输待处理的晶片; 并且连接到其周边，使用等离子体处理待处理晶片的真空处理室（61）（62）（63）。 所述锁定室（31）设置在中间室（32）和大气传送室（21）的后表面之间。 当在所述真空输送室（41）（42）之间输送时，待处理晶片被放置在所述中间室（32）中并由所述中间室（32）储存。 在多个真空处理室（61）（62）（63）中的一个中，通过锁定室（31），所述真空处理装置（100）将待处理的晶片输送到被放置在 盒式支架，并处理待处理的晶片。 在真空处理装置（100）中，在中间室（32）内配置有虚设的晶片收纳部。 当在处理室（61）（62）（63）中形成等离子体时，所述虚拟晶片存储部分放置在处理室（61）（62）（63）内，处理室由处理室 62）（63）使用伪晶片和与上述处理不同的条件。

公开(公告)号：US08588962B2

公开(公告)日：2013-11-19

申请号：US13633155

申请日：2012-10-02

Applicant: Hitachi High-Technologies Corporation

Inventor： Keita Nogi ,  Teruo Nakata ,  Yoshiro Suemitsu ,  Michinori Kawaguchi ,  Satomi Inoue

IPC: G06F7/00

CPC classification number: H01L21/67276

Abstract: Transportation control in a vacuum processing device with high transportation efficiency without lowering throughput is provided. A control unit is configured to update in real time and holds device state information showing an action state of each of a process chamber, a transportation mechanism unit, a buffer room, and a holding mechanism unit, the presence of a process subject member, and a process state thereof; select a transport algorithm from among transport algorithm judgment rules that are obtained by simulating in advance a plurality of transport algorithms for controlling transportation of a process subject member for each condition of a combination of the number and arrangement of the process chambers and process time of a process subject member based on the device state information and process time of the process subject member; and compute a transport destination of the process subject member based on the selected transport algorithm.

Abstract translation: 提供了具有高运输效率而不降低生产量的真空处理装置中的运输控制。 控制单元被配置为实时更新并保持表示处理室，运送机构单元，缓冲室和保持机构单元的动作状态的装置状态信息，处理对象构件的存在和 其处理状态; 从传输算法判断规则中选择一种传输算法，该传输算法判断规则是通过预先模拟用于控制处理室的数量和布置的组合的每个条件的处理对象构件的传送的多个传输算法而获得的，以及处理室的处理时间 基于过程主体的设备状态信息和处理时间处理主题成员; 并基于所选择的传输算法计算过程主体成员的传输目的地。

公开(公告)号：US10408762B2

公开(公告)日：2019-09-10

申请号：US14825098

申请日：2015-08-12

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Ryoji Asakura ,  Kenji Tamaki ,  Daisuke Shiraishi ,  Akira Kagoshima ,  Satomi Inoue

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/3065 ,  G01N21/68 ,  H01J37/32

Abstract: A plasma processing apparatus, plasma processing method, and plasma processing analysis method in which a suitable combination of wavelength, time interval, and etching condition parameter for control to change etching conditions is determined among wavelengths, time intervals, and changeable parameters for spectroscopic measurement data in order to ensure stable etching conditions. Specifically, a regression equation which represents the correlation between emission intensity and etching result at a wavelength and a time interval is obtained for each of two or more combinations of wavelength, time interval, and etching condition parameter. Furthermore, for each of the combinations, the amount of change is calculated from the regression equation when the value set for the etching condition parameter is changed. Among the combinations, the combination for which the amount of change is the smallest is determined as the combination of wavelength, time interval, and changed etching condition parameter to be used for control.

公开(公告)号：US10153217B2

公开(公告)日：2018-12-11

申请号：US15437026

申请日：2017-02-20

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Daisuke Shiraishi ,  Akira Kagoshima ,  Yuji Nagatani ,  Satomi Inoue

IPC: H01L21/00 ,  H01J37/32 ,  H01L21/66 ,  H01L21/311 ,  H01L21/67

Abstract: A plasma processing apparatus including a processing chamber, a radio frequency power source, a monitoring unit, and a calculation unit is provided. In the processing chamber, etching target film is etched by using plasma. The radio frequency power source supplies radio frequency electric power. The monitoring unit monitors light emission of the plasma. The calculation unit estimates an etching amount of plasma etching of the etching target film based on an emission intensity and a correlation between the etching amount of the etching target film and the emission intensity, the emission intensity being obtained when removing, by using the plasma, a deposition film deposited as a result of the plasma etching.

公开(公告)号：US20180341625A1

公开(公告)日：2018-11-29

申请号：US16053158

申请日：2018-08-02

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Seiichi Watanabe ,  Satomi Inoue ,  Shigeru Nakamoto ,  Kousuke Fukuchi

IPC: G06F17/18 ,  H01J37/32 ,  H01L21/66

Abstract: The present invention is a data processing apparatus including a data input/output device for receiving data, a storage for storing the data received by the data input/output device, a data processing program storage for storing a data processing program that includes the steps of calculating, using a double exponential smoothing method, a first predicted value that is a predicted value of smoothed data and a second predicted value that is a predicted value of the gradient of the smoothed data, and calculating, using a double exponential smoothing method in which the second predicted value is set as input data, a third predicted value that is a predicted value of smoothed data and a fourth predicted value that is a predicted value of the gradient of the smoothed data, and a data calculation processing apparatus for performing the data processing under the data processing program.

公开(公告)号：US09865439B2

公开(公告)日：2018-01-09

申请号：US14851744

申请日：2015-09-11

Applicant: Hitachi High-Technologies Corporation

Inventor： Shigeru Nakamoto ,  Tatehito Usui ,  Satomi Inoue ,  Kousuke Fukuchi

IPC: H01J37/32

CPC classification number: H01J37/32972 ,  H01J37/32963

Abstract: A processing apparatus and a processing method for a semiconductor wafer, which allow stable end point detection, are provided. In the plasma processing apparatus or method in which a processing-target film layer of a film structure including a plurality of film layers formed in advance on a surface of a wafer mounted on a sample stage deployed within a processing chamber inside a vacuum vessel, by using plasma formed with the processing chamber, intensities of lights of a plurality of wavelengths are detected using data composed of results of reception of lights during a plurality of different time-intervals by an optical receiver which receives lights of the plurality of wavelengths from an inside of the processing chamber while processing is going.

公开(公告)号：US09805940B2

公开(公告)日：2017-10-31

申请号：US15060822

申请日：2016-03-04

Applicant: Hitachi High-Technologies Corporation

Inventor： Kousuke Fukuchi ,  Shigeru Nakamoto ,  Tatehito Usui ,  Satomi Inoue

IPC: G01L21/30 ,  H01L21/3065 ,  H01L21/308 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01J37/32972 ,  H01J2237/334 ,  H01L21/3081 ,  H01L22/12 ,  H01L22/26

Abstract: A plasma processing method includes forming plasma in a processing chamber; and performing etching to a film to be processed of a film structure that has previously been disposed on an upper surface of a wafer that includes a plurality of film layers. The film structure includes: a lower film including at least one film layer and a groove structure; and an upper film including at least one film layer that covers an inside and an upper end of the groove structure. The plasma processing method includes: removing the upper film by etching until an upper end of the groove structure of the lower film is exposed; performing etching to a film layer of the upper film inside the groove structure; and determining an end point by using a value of thickness of the film layer inside the groove structure of the lower film upon completion of the removing.