公开(公告)号：US20160091304A1

公开(公告)日：2016-03-31

申请号：US14890844

申请日：2014-03-10

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Shigeru MATSUI ,  Yugo ONODA

IPC: G01B11/24

CPC classification number: G01B11/2441 ,  G01B9/02068 ,  G01B9/02087 ,  G01B9/0209 ,  G01B9/04 ,  G01B11/0608 ,  G01B11/26

Abstract: To provide a technique that can measure a surface profile of any test object in a nondestructive manner and noncontact manner, highly accurately, and in a wide tilt angle dynamic range. In white light interference method using a dual beam interferometer, the technique is configured to be capable of changing a surface orientation of a standard plane with respect to an incident optical axis on the standard plane, acquires, while relatively changing the surface orientation of the standard plane with respect to a local surface orientation in any position on a test surface, a plurality of interferograms generated by interference of reflected light from the test surface and reflected light from the standard plane, and calculates the local surface orientation on the test surface from the interferograms to thereby measure a surface profile of the test surface.

Abstract translation: 提供一种可以以非破坏性的方式和非接触的方式，高精度地和在宽倾斜角动态范围内测量任何测试对象的表面轮廓的技术。 在使用双光束干涉仪的白光干涉法中，该技术被配置为能够相对于标准平面上的入射光轴改变标准平面的表面取向，同时相对地改变标准的表面取向 在测试表面上的任何位置相对于局部表面取向的平面，通过来自测试表面的反射光的干涉和来自标准平面的反射光产生的多个干涉图，并且从测试表面计算来自测试表面的局部表面取向 从而测量测试表面的表面轮廓。

公开(公告)号：US20140002810A1

公开(公告)日：2014-01-02

申请号：US14019920

申请日：2013-09-06

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Masaaki ITO ,  Minori NOGUCHI ,  Shigeru MATSUI

IPC: G01N21/95

CPC classification number: G01N21/9501 ,  G01N21/95623 ,  G01N2021/8822 ,  G06K9/74

Abstract: The present invention provides an inspection apparatus having a high throughput and high sensitivity with respect to a number of various manufacturing processes and defects of interest in inspection of a specimen such as a semiconductor wafer on which a pattern is formed. The apparatus illuminates with light the specimen having the pattern formed thereon, forms an image of the specimen on an image sensor through a reflective optics, and determines the existence/nonexistence of a defect. The reflective optics has a conjugate pair of Fourier transform optics. An aberration of the reflective optics is corrected off-axis. The reflective optics has a field of view in non-straight-line slit form on the specimen surface. Also, the optics is of a reflection type, includes a conjugate pair of Fourier transform optics and has a field of view in non-straight-line slit form. An optimum wavelength band is selected according to the specimen (FIG. 1).

Abstract translation: 本发明提供了一种检测装置，其相对于在其上形成有图案的半导体晶片的样本的检查中的多种制造工艺和多个不同的制造工艺和缺陷而具有高生产率和高灵敏度。 该装置用光照射具有形成在其上的图案的样本，通过反射光学元件在图像传感器上形成样本的图像，并且确定缺陷的存在/不存在。 反射光学器件具有傅立叶变换光学器件的共轭对。 反射光学器件的像差被偏离校正。 反射光学元件在样品表面上具有非直线狭缝形式的视场。 此外，光学器件是反射型的，包括傅立叶变换光学器件的共轭对，并且具有非直线狭缝形式的视场。 根据样品选择最佳波长带（图1）。

公开(公告)号：US20160282526A1

公开(公告)日：2016-09-29

申请号：US14777546

申请日：2014-01-30

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Takanori AONO ,  Yoshisada EBATA ,  Shigeru MATSUI ,  Tetsuya WATANABE

IPC: G02B5/18 ,  G01N21/31 ,  G02B1/04

CPC classification number: G02B5/1852 ,  G01N21/31 ,  G02B1/04 ,  G02B5/1814 ,  G02B5/1857 ,  G02B5/1861

Abstract: A technique is provided which enables preparation of a curved grating having a desired curvature, by plastically deforming, along a curved substrate, a flat grating prepared by a semiconductor process on a silicon substrate, and which thus prepares a diffraction grating with high accuracy. A silicon flat grating prepared by a semiconductor process is transferred to an amorphous material, and the amorphous material substrate is curved and mounted on a curved fixed substrate, thus providing a curved grating having a crystalline material in which the generation of a dislocation line is restrained.

Abstract translation: 提供了一种技术，其能够通过在弯曲基板上通过硅衬底上的半导体工艺制备的平面光栅进行塑性变形来制备具有期望曲率的弯曲光栅，从而准确地制备衍射光栅。 将通过半导体工艺制备的硅平坦光栅转移到非晶材料，并且非晶材料基板弯曲并安装在弯曲的固定基板上，从而提供具有结晶材料的弯曲光栅，其中限制了位错线的产生 。

公开(公告)号：US20140176943A1

公开(公告)日：2014-06-26

申请号：US14189921

申请日：2014-02-25

Applicant: Hitachi High-Technologies Corporation

Inventor： Yoshimasa OSHIMA ,  Toshiyuki NAKAO ,  Shigeru MATSUI

IPC: G01N21/95

CPC classification number: G01N21/9501 ,  G01N2021/4716

Abstract: A surface defect inspection apparatus and method is provided which illuminates a plurality of beams set to different intensity values to a sample. Scattered light from the plurality of beams is detected and processed to analyze the surface defects.

Abstract translation: 提供一种表面缺陷检查装置和方法，其向样本照亮设定为不同强度值的多个光束。 检测并处理来自多个光束的散射光以分析表面缺陷。

公开(公告)号：US20140009756A1

公开(公告)日：2014-01-09

申请号：US13929030

申请日：2013-06-27

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Shigeru MATSUI

IPC: G01N21/95

CPC classification number: G01N21/9501 ,  G01N2201/103

Abstract: A surface inspecting apparatus rotates a semiconductor wafer 100 (inspection object) as a main scan while translating the semiconductor wafer 100 as an auxiliary scan, illuminates the surface of the semiconductor wafer 100 with illuminating light 21, thereby forms an illumination spot 3 as the illumination area of the illuminating light 21, detects scattered or diffracted or reflected light from the illumination spot, and detects a foreign object existing on the surface of the semiconductor wafer 100 or in a part of the semiconductor wafer 100 in the vicinity of the surface based on the result of the detection. In the surface inspecting apparatus, the translation speed of the auxiliary scan is controlled according to the distance from the rotation center of the semiconductor wafer 100 in the main scan to the illumination spot. With this control, the inspection time can be shortened while the deterioration in the detection sensitivity and the increase in the thermal damage during the surface inspection are suppressed.

Abstract translation: 表面检查装置将作为辅助扫描的半导体晶片100作为主扫描旋转半导体晶片100（检查对象），用照明光21照射半导体晶片100的表面，从而形成照明点3作为照明 照射光21的区域，检测来自照明光点的散射或衍射或反射的光，并且基于以下方式检测存在于半导体晶片100的表面上的异物或半导体晶片100的表面附近的异物 检测结果。 在表面检查装置中，根据从主扫描中的半导体晶片100的旋转中心到照明点的距离来控制辅助扫描的平移速度。 通过该控制，可以在检测灵敏度的劣化和表面检查时的热损伤的增加被抑制的同时缩短检查时间。

公开(公告)号：US20140185041A1

公开(公告)日：2014-07-03

申请号：US14196784

申请日：2014-03-04

Applicant: HITACHI HIGH TECHNOLOGIES CORPORATION

Inventor： Shigeru MATSUI ,  Mizuki OKU

IPC: G01N21/93

CPC classification number: G01N21/93 ,  G01N21/94 ,  G01N21/9501

Abstract: A surface inspecting apparatus can inspect a smaller defect by using a PSL of a smaller particle size. However, the particle size of the PSL is restricted. In the conventional surface inspecting apparatus, therefore, no consideration has been taken as to how to inspect the defect of such a small particle size as is not set in the PSL which will be needed in the near future in an inspection of a semiconductor manufacturing step. The invention has a light source device for generating light which simulated at least one of a wavelength, a light intensity, a time-dependent change of the light intensity, and a polarization of light which was scattered, diffracted, or reflected by an inspection object, and the light is inputted to a photodetector of the surface inspecting apparatus. The smaller defect can be inspected.

Abstract translation: 表面检查装置可以通过使用较小粒径的PSL来检查较小的缺陷。 然而，PSL的粒径受到限制。 因此，在传统的表面检查装置中，在半导体制造步骤的检查中，不考虑如何检查在不久的将来需要的PSL中未设置的这种小粒径的缺陷 。 本发明具有用于产生光的光源装置，其模拟由检查对象散射，衍射或反射的光的波长，光强度，时间依赖性变化和光的偏振中的至少一个 并且光被输入到表面检查装置的光电检测器。 可以检查较小的缺陷。

公开(公告)号：US20130242293A1

公开(公告)日：2013-09-19

申请号：US13886302

申请日：2013-05-03

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Kenji OKA ,  Shigeru MATSUI

IPC: G01N21/88

CPC classification number: G01N21/8851 ,  G01N21/9501

Abstract: An appearance inspection apparatus analyzes a difference in detection characteristics of detection signals obtained by detectors to flexibly meet various inspection purposes without changing a circuit or software. The apparatus includes a signal synthesizing section that synthesizes detection signals from the detectors in accordance with a set condition. An input operating section sets a synthesizing condition of the detection signal by the signal synthesizing section, and an information display section displays a synthesizing map structured based on a synthesized signal which is synthesized by the signal synthesizing section in accordance with a condition set by the input operating section.