公开(公告)号：US20150194327A1

公开(公告)日：2015-07-09

申请号：US14663548

申请日：2015-03-20

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Susumu Tauchi ,  Hideaki Kondo ,  Teruo Nakata ,  Keita Nogi ,  Atsushi Shimoda ,  Takafumi Chida

IPC: H01L21/67 ,  H01L21/677

CPC classification number: H01L21/67184 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67745 ,  H01L21/67769 ,  Y10S414/139

Abstract: A vacuum processing system of a semiconductor processing substrate and a vacuum processing method using the same comprises an atmospheric transfer chamber having a plurality of cassette stands for transferring a wafer, a lock chamber for storing the wafer transferred from the atmospheric transfer chamber, a first vacuum transfer chamber to which the wafer from the lock chamber is transferred, a transfer intermediate chamber connected to the first vacuum transfer chamber, a second vacuum transfer chamber connected to the transfer intermediate chamber, at least one vacuum processing chamber connected to the first vacuum transfer chamber, and two or more vacuum processing chambers connected to a rear side of the second vacuum transfer chamber, wherein the number of vacuum processing chambers connected to the first vacuum transfer chamber is smaller than the number of vacuum processing chambers connected to the second vacuum transfer chamber, or the number of use of vacuum processing chambers connected to the first vacuum transfer chamber is restricted to one.

Abstract translation: 半导体处理基板的真空处理系统和使用其的真空处理方法包括具有多个用于传送晶片的盒架的大气传送室，用于存储从大气传送室转移的晶片的锁定室，第一真空 传送室，来自锁定室的晶片被转印到该传送室，连接到第一真空传送室的传送中间室，连接到传送中间室的第二真空传送室，连接到第一真空传送室的至少一个真空处理室 以及连接到第二真空传送室的后侧的两个或更多个真空处理室，其中连接到第一真空传送室的真空处理室的数量小于连接到第二真空传送室的真空处理室的数量 ，或使用真空加工台数 连接到第一真空传送室的器件被限制为一个。