中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

10 records (took 0.016 seconds)

    MOLECULE SENSING AND IDENTIFICATION
    2.
    发明申请
    MOLECULE SENSING AND IDENTIFICATION 有权
    分子感测和鉴定

    公开(公告)号：US20130335060A1

    公开(公告)日：2013-12-19

    申请号：US13767611

    申请日：2013-02-14

    Applicant: HONEYWELL INTERNATIONAL INC.

    Inventor： Mihai N. Mihaila ,  Bogdan Serban

    IPC: G01R19/00

    CPC classification number: G01R19/00 ,  G01N27/414

    Abstract: The present disclosure includes devices and methods for spectroscopic identification of molecules. One device includes a topological insulator layer oriented either above or below two metallic contacts and wherein the contacts are oriented such that a voltage can be applied across the contacts and a current-voltage characteristic can be measured.

    Abstract translation: 本公开包括用于光谱鉴定分子的装置和方法。 一个器件包括定位在两个金属触点上方或下方的拓扑绝缘体层，并且其中触点被定向成使得可以跨接触件施加电压并且可以测量电流 - 电压特性。

    Molecule sensing and identification
    4.
    发明授权
    Molecule sensing and identification 有权
    分子感测和识别

    公开(公告)号：US09097741B2

    公开(公告)日：2015-08-04

    申请号：US13767611

    申请日：2013-02-14

    Applicant: Honeywell International Inc.

    Inventor： Mihai N. Mihaila ,  Bogdan Serban

    IPC: G01R19/00 ,  G01N27/414

    CPC classification number: G01R19/00 ,  G01N27/414

    Abstract: The present disclosure includes devices and methods for spectroscopic identification of molecules. One device includes a topological insulator layer oriented either above or below two metallic contacts and wherein the contacts are oriented such that a voltage can be applied across the contacts and a current-voltage characteristic can be measured.

    Abstract translation: 本公开包括用于光谱鉴定分子的装置和方法。 一个器件包括定位在两个金属触点上方或下方的拓扑绝缘体层，并且其中触点被定向成使得可以跨接触件施加电压并且可以测量电流 - 电压特性。

    Humidity Sensor
    5.
    发明申请
    Humidity Sensor 审中-公开
    湿度传感器

    公开(公告)号：US20160202201A1

    公开(公告)日：2016-07-14

    申请号：US14991096

    申请日：2016-01-08

    Applicant: Honeywell International Inc.

    Inventor： Cornel Cobianu ,  Bogdan Serban ,  Cazimir Bostan ,  Stefan Costea ,  Octavian Buiu ,  Alisa Stratulat ,  Mihai Brezeanu

    IPC: G01N27/22

    CPC classification number: G01N27/223 ,  G01N27/414

    Abstract: A humidity sensor having a sensing component and a reference component. Each component may indicate humidity by using a transistor that has an upper gate dielectric layer with a dielectric constant which varies according to exposure to a change of moisture. The sensing component may have its upper gate dielectric layer exposed to an ambient environment. The reference component may have its upper gate dielectric layer with an absence of exposure to any environment. Sensing and reference transistor outputs may be processed with differential electronics to provide an output to indicate humidity in the ambient environment. Differential processing may reflect an output having a high common mode rejection ratio. An example of an upper gate dielectric layer deposited over a thin gate dielectric layer may be a hydrophobic polymer material. Other materials may instead be used. The components and processing electronics may be transistor circuits fabricated with integrated circuit technology.

    Abstract translation: 一种具有感测部件和基准部件的湿度传感器。 每个组件可以通过使用具有介电常数的上栅极电介质层的晶体管来指示湿度，所述介电常数随暴露于湿度变化而变化。 感测组件可能具有暴露于周围环境的其上栅极电介质层。 该参考部件可以具有不存在暴露于任何环境的上栅极电介质层。 传感和参考晶体管输出可以用差分电子器件处理，以提供输出以指示环境中的湿度。 差分处理可以反映具有高共模抑制比的输出。 沉积在薄栅介质层上的上栅极电介质层的实例可以是疏水性聚合物材料。 可以替代地使用其他材料。 组件和处理电子器件可以是用集成电路技术制造的晶体管电路。

    FET based humidity sensor with barrier layer protecting gate dielectric
    7.
    发明授权
    FET based humidity sensor with barrier layer protecting gate dielectric 有权

    公开(公告)号：US10585058B2

    公开(公告)日：2020-03-10

    申请号：US15594184

    申请日：2017-05-12

    Applicant: Honeywell International Inc.

    Inventor： Cornel Cobianu ,  Alisa Stratulat ,  Bogdan Serban ,  Octavian Buiu ,  Cazimir Gabriel Bostan ,  Mihai Brezeanu ,  Stefan Dan Costea ,  Richard Davis

    IPC: G01N27/22 ,  G01N27/414 ,  H01L29/49 ,  H01L29/51

    Abstract: An illustrative humidity sensor may include a substrate having a source and a drain, wherein the drain is laterally spaced from the source. A gate stack is provided in the space between the source and the drain to form a transistor. The gate stack may include a gate insulator situated on the substrate to form a gate insulator/substrate interface. The gate stack may further include a barrier layer above the gate insulator. The barrier layer may be configured to act as a barrier to mobile charge, humidity and/or other contaminates, and may help prevent such contaminates from reaching the gate insulator/substrate interface. The gate stack may further include a humidity sensing layer above the barrier layer. The humidity sensing layer, when exposed to humidity, may modulate the conduction channel in the substrate under the gate insulator and between the source and the drain. In some cases, the humidity level may be determined by monitoring the current flowing between the source and drain.

Patent Agency Ranking