公开(公告)号：US20190187551A1

公开(公告)日：2019-06-20

申请号：US16327716

申请日：2017-08-02

Applicant: HOYA CORPORATION

Inventor： Hiroyuki IWASHITA ,  Atsushi MATSUMOTO ,  Osamu NOZAWA

IPC: G03F1/32 ,  G03F1/58 ,  H01L21/3065 ,  G03F1/00 ,  G03F1/80

CPC classification number: G03F1/32 ,  G03F1/144 ,  G03F1/26 ,  G03F1/58 ,  G03F1/80 ,  H01L21/3065

Abstract: Provided is a mask blank including a phase shift film having a transmittance of 20% or more difficult to achieve in a phase shift film of a single layer made of a silicon nitride material, and the phase shift film is achieved by using a structure having two or more sets of a stacked structure, each set including a low transmission layer and a high transmission layer disposed in order from a transparent substrate side.The mask blank includes a phase shift film on a transparent substrate. The phase shift film has a function of transmitting exposure light of an ArF excimer laser at a transmittance of 20% or more. The mask blank has two or more sets of a stacked structure, each set including a low transmission layer and a high transmission layer. The low transmission layer is formed of a silicon nitride-based material. The high transmission layer is formed of a silicon oxide-based material. The high transmission layer provided at an uppermost position is thicker than the high transmission layer provided at a position other than the uppermost position. The low transmission layer is thicker than the high transmission layer provided at a position other than the uppermost position.

公开(公告)号：US20180252995A1

公开(公告)日：2018-09-06

申请号：US15760265

申请日：2016-09-08

Applicant: HOYA CORPORATION

Inventor： Atsushi MATSUMOTO ,  Hiroaki SHISHIDO ,  Takashi UCHIDA

IPC: G03F1/32 ,  G03F1/58 ,  G03F1/80 ,  G03F1/42 ,  G03F1/20 ,  H01L21/033

CPC classification number: G03F1/32 ,  G03F1/20 ,  G03F1/42 ,  G03F1/58 ,  G03F1/80 ,  H01L21/0337

Abstract: According to the present invention, provided is a mask blank (10), in which; a light shielding film (4) has a single layer structure or a laminate structure of a plurality of layers; at least one layer of the light shielding film (4) is formed of a material which contains a transition metal and silicon and is free from nitrogen and oxygen, or a material which contains a transition metal, silicon, and nitrogen and satisfies a condition of the following expression (1); a phase shift film (2) has a surface layer and a layer other than the surface layer; and the layer other than the surface layer is formed of a material which contains a transition metal, silicon, nitrogen, and oxygen, has a content of oxygen of 3 atom % or more, and satisfies a condition of the following expression (A). CN≤9.0×10−6×RM4−1.65×10−4×RM3−7.718×10−2×RM2+3.611×RM−21.084   Expression (1) 0.04×AS−0.06×AM>1   Expression (A)

公开(公告)号：US20180180987A1

公开(公告)日：2018-06-28

申请号：US15897330

申请日：2018-02-15

Applicant: HOYA CORPORATION

Inventor： Atsushi MATSUMOTO ,  Hiroaki SHISHIDO ,  Takashi UCHIDA

IPC: G03F1/32 ,  G03F1/58 ,  G03F7/20

CPC classification number: G03F1/32 ,  G03F1/58 ,  G03F7/2053

Abstract: To provide a phase-shift mask in which the reduction in thickness of a light-shielding film is provided when a transition metal silicide-based material is used for the light-shielding film and by which the problem of ArF light fastness can be solved; and a mask blank for manufacturing the phase-shift mask.A mask blank has a structure in which a phase-shift film, an etching stopper film, a light-shielding film, and a hard mask film are laminated in said order on a transparent substrate, and at least one layer in the light-shielding film is made of a material which contains transition metal and silicon, and satisfies the conditions of Formula (1) below: CN≤9.0×10−6×RM4−1.65×10−4×RM3−7.718×10−2×RM2+3.611×RM−21.084   Formula (1) wherein RM is a ratio of the content of transition metal to the total content of transition metal and silicon in said one layer, and CN is the content of nitrogen in said one layer.

公开(公告)号：US20160377975A1

公开(公告)日：2016-12-29

申请号：US15121124

申请日：2014-12-09

Applicant: HOYA CORPORATION

Inventor： Atsushi MATSUMOTO ,  Hiroaki SHISHIDO ,  Takashi UCHIDA

IPC: G03F1/32 ,  G03F7/20

CPC classification number: G03F1/32 ,  G03F1/58 ,  G03F7/2053

Abstract: To provide a phase-shift mask in which the reduction in thickness of a light-shielding film is provided when a transition metal silicide-based material is used for the light-shielding film and by which the problem of ArF light fastness can be solved; and a mask blank for manufacturing the phase-shift mask.A mask blank 10 comprises a phase-shift film 2 and a light-shielding film 4 on a transparent substrate 1, the phase-shift film 2 is made of a material with ArF light fastness, and at least one layer in the light-shielding film 4 is made of a material which contains transition metal, silicon, and nitrogen, and satisfies the conditions of Formula (1) below: CN≦9.0×10−6×RM4−1.65×10−4×RM3−7.718×10−2×RM2+3.611×RM−21.084  Formula (1) wherein RM is a ratio of the content of transition metal to the total content of transition metal and silicon in said one layer, and CN is the content of nitrogen in said one layer.

Abstract translation: 提供：在将过渡金属硅化物材料用于遮光膜的情况下，具有较薄的遮光膜的相移掩模，同时解决了ArF耐光性的问题; 以及用于制造该相移掩模的掩模坯料。 一种在透光基板（1）上具有相移膜（2）和遮光膜（4）的掩模板（10），其中相移膜（2）由具有ArF耐光性的材料形成 并且至少一层遮光膜（4）由含有过渡金属，硅和氮的材料形成，并满足下面的式（1）的条件。 CN≤9.0×10-6×RM 4 - 1.65×10-4×RM 3 - 7.718×10-2×RM 2 + 3.611×RM - 21.084式（1）在这一点上，RM表示过渡金属 含量相对于上述一层中的过渡金属含量和硅含量的总和，CN表示上述一层中的氮含量。