公开(公告)号：US10424608B1

公开(公告)日：2019-09-24

申请号：US15885708

申请日：2018-01-31

Applicant: HRL Laboratories, LLC

Inventor： Terence J. DeLyon ,  Rajesh D. Rajavel ,  Sevag Terterian ,  Minh B. Nguyen ,  Hasan Sharifi

IPC: H01L31/00 ,  H01L27/144 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0368 ,  H01L31/109 ,  H01L31/0304

Abstract: Methods of fabrication and monolithic integration of a polycrystalline infrared detector structure deposit Group III-V compound semiconductor materials at a low deposition temperature within a range of about 300° C. to about 400° C. directly on an amorphous template. The methods provide wafer-level fabrication of polycrystalline infrared detectors and monolithic integration with a readout integrated circuit wafer for focal plane arrays.

公开(公告)号：US10720456B1

公开(公告)日：2020-07-21

申请号：US16519986

申请日：2019-07-23

Applicant: HRL Laboratories, LLC

Inventor： Terence J. DeLyon ,  Rajesh D. Rajavel ,  Sevag Terterian ,  Minh B. Nguyen ,  Hasan Sharifi

IPC: H01L31/0352 ,  H01L27/144 ,  H01L31/0304 ,  H01L31/18 ,  H01L31/0368 ,  H01L31/02 ,  H01L31/109

Abstract: Methods of fabrication and monolithic integration of a polycrystalline infrared detector structure deposit Group III-V compound semiconductor materials at a low deposition temperature within a range of about 300° C. to about 400° C. directly on an amorphous template. The methods provide wafer-level fabrication of polycrystalline infrared detectors and monolithic integration with a readout integrated circuit wafer for focal plane arrays.