公开(公告)号：US12207574B1

公开(公告)日：2025-01-21

申请号：US18748017

申请日：2024-06-19

Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Xiaomin Cheng ,  Haobin Li ,  Yunhao Luo ,  Xiangshui Miao

IPC: H10N70/20 ,  G11C13/00 ,  G11C27/00 ,  H10B63/00 ,  H10N70/00

Abstract: The disclosure discloses a reconfigurable heterojunction memristor, a control method, a fabrication method, and an application thereof. The functional layer designed by the disclosure comprises a PN heterojunction of n-AgO and p-Ag2O or a PN heterojunction of n-CuO2 and p-CuO. In the analog type, multiple resistance state performance is exhibited based on charge trapping and releasing, and self-rectification characteristics are exhibited, without the need for a selector, which facilitates large-scale integration; in the digital type, the presence of Ag/Cu ions in the layer helps to form Ag/Cu conductive filaments, the switching threshold voltage is small, and the advantages of fast switching speed and low switching power consumption are provided. The disclosure realizes a PN heterojunction device of an N-type oxide layer and a P-type oxide layer through electrochemical principles, and is analog type-digital type reconfigurable between a self-rectifying analog type device and a digital type device.