公开(公告)号：US12256651B2

公开(公告)日：2025-03-18

申请号：US17762742

申请日：2020-10-21

Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Xiaomin Cheng ,  Jinlong Feng ,  Ming Xu ,  Meng Xu ,  Xiangshui Miao

IPC: H10N70/20 ,  H10B63/10 ,  H10N70/00

Abstract: A superlattice phase-change thin film with a low density change, a phase-change memory and a preparation method. The superlattice phase-change thin film includes first phase-change layers (7) and second phase-change layers (8) that are alternately stacked to form a periodic structure; during crystallization, the first phase-change layer (7) has a conventional positive density change, and the second phase-change layer (8) has an abnormal negative density change, therefore, the abnormal density reduction and volume increase of the second phase-change layer (8) during crystallization can be used to offset the volume reduction of the first phase-change layer (7) during crystallization.