公开(公告)号：US07781303B2

公开(公告)日：2010-08-24

申请号：US11774934

申请日：2007-07-09

Applicant: Hai Jun Zhao

Inventor： Hai Jun Zhao

IPC: H01L21/76

CPC classification number: H01L21/76235 ,  H01L21/76237

Abstract: A method for preparing a shallow trench isolation comprising the steps of forming at least one trench in a semiconductor substrate, performing an implanting process to implant nitrogen-containing dopants into an upper sidewall of the trench such that the concentration of the nitrogen-containing dopants in the upper sidewall is higher than that in the bottom sidewall of the trench, forming a spin-on dielectric layer filling the trench and covering the surface of the semiconductor substrate, performing a thermal oxidation process to form a silicon oxide layer covering the inner sidewall. Since the nitrogen-containing dopants can inhibit the oxidation rate and the concentration of the nitrogen-containing dopants in the upper inner sidewall is higher than that in the bottom inner sidewall of the trench, the thickness of the silicon oxide layer formed by the thermal oxidation process is larger at the bottom portion than at the upper portion of the trench.

Abstract translation: 一种用于制备浅沟槽隔离的方法，包括以下步骤：在半导体衬底中形成至少一个沟槽，执行植入工艺以将含氮掺杂剂注入到沟槽的上侧壁中，使得含氮掺杂剂的浓度在 上侧壁高于沟槽的底侧壁中的上侧壁，形成填充沟槽并覆盖半导体衬底的表面的旋涂电介质层，进行热氧化工艺以形成覆盖内侧壁的氧化硅层。 由于含氮掺杂剂可以抑制氧化速度，并且上部内侧壁中的含氮掺杂剂的浓度高于沟槽的底部内侧壁中的含氮掺杂剂的浓度，所以通过热氧化形成的氧化硅层的厚度 处理在底部比在沟槽的上部处更大。

公开(公告)号：US20080293213A1

公开(公告)日：2008-11-27

申请号：US11774811

申请日：2007-07-09

Applicant: Neng Hui Yang ,  Hai Jun Zhao

Inventor： Neng Hui Yang ,  Hai Jun Zhao

IPC: H01L21/76

CPC classification number: H01L21/76237 ,  H01L21/76235

Abstract: A method for preparing a shallow trench isolation comprising the steps of forming at least one trench in a semiconductor substrate, performing an implanting process to implant nitrogen-containing dopants into an upper sidewall of the trench such that the concentration of the nitrogen-containing dopants in the upper sidewall is higher than that in the bottom sidewall of the trench, forming a spin-on dielectric layer filling the trench and covering the surface of the semiconductor substrate, performing a thermal oxidation process to form a silicon oxide layer covering the inner sidewall. Since the nitrogen-containing dopants can inhibit the oxidation rate and the concentration of the nitrogen-containing dopants in the upper inner sidewall is higher than that in the bottom inner sidewall of the trench, the thickness of the silicon oxide layer formed by the thermal oxidation process is larger at the bottom portion than at the upper portion of the trench.

公开(公告)号：US20080286936A1

公开(公告)日：2008-11-20

申请号：US11774934

申请日：2007-07-09

Applicant: Hai Jun Zhao

Inventor： Hai Jun Zhao

IPC: H01L21/76

CPC classification number: H01L21/76235 ,  H01L21/76237

Abstract: A method for preparing a shallow trench isolation comprising the steps of forming at least one trench in a semiconductor substrate, performing an implanting process to implant nitrogen-containing dopants into an upper sidewall of the trench such that the concentration of the nitrogen-containing dopants in the upper sidewall is higher than that in the bottom sidewall of the trench, forming a spin-on dielectric layer filling the trench and covering the surface of the semiconductor substrate, performing a thermal oxidation process to form a silicon oxide layer covering the inner sidewall. Since the nitrogen-containing dopants can inhibit the oxidation rate and the concentration of the nitrogen-containing dopants in the upper inner sidewall is higher than that in the bottom inner sidewall of the trench, the thickness of the silicon oxide layer formed by the thermal oxidation process is larger at the bottom portion than at the upper portion of the trench.

Abstract translation: 一种用于制备浅沟槽隔离的方法，包括以下步骤：在半导体衬底中形成至少一个沟槽，执行植入工艺以将含氮掺杂剂注入到沟槽的上侧壁中，使得含氮掺杂剂的浓度在 上侧壁高于沟槽的底侧壁中的上侧壁，形成填充沟槽并覆盖半导体衬底的表面的旋涂电介质层，进行热氧化工艺以形成覆盖内侧壁的氧化硅层。 由于含氮掺杂剂可以抑制氧化速度，并且上部内侧壁中的含氮掺杂剂的浓度高于沟槽的底部内侧壁中的含氮掺杂剂的浓度，所以通过热氧化形成的氧化硅层的厚度 处理在底部比在沟槽的上部处更大。