公开(公告)号：US20240167902A1

公开(公告)日：2024-05-23

申请号：US18241305

申请日：2023-09-01

Applicant: Harbin Institute of Technology

Inventor： Jia ZHANG ,  Songlin LI ,  Shuai LIANG ,  Boxuan WU ,  Xinxin HE ,  Ping GUO

IPC: G01L9/06

CPC classification number: G01L9/06

Abstract: The present disclosure provides a high-resolution graphene heterojunction based pressure sensor. The present disclosure relates to the technical field of pressure sensor design. The present disclosure uses a graphene/hexagonal boron nitride/graphene (G/h-BN/G) vertical heterojunction thin film as a pressure-sensitive diaphragm. A sensor substrate has a micro-nano arrayed concave cavity structure. Under the action of atmospheric pressure, the G/h-BN/G vertical heterojunction thin film generates localized internal stress, which changes an energy band structure of the vertical heterojunction thin film, and thus changes a tunneling current between the two upper and lower graphene layers, thereby reflecting the external atmospheric pressure changes. The principle of the graphene heterojunction based pressure sensor is based on tunneling effect. The tunneling current of the graphene heterojunction based pressure sensor is extremely sensitive to the internal stress on the heterojunction, so the sensor can achieve high-resolution detection of atmospheric pressure.