公开(公告)号：US12234545B2

公开(公告)日：2025-02-25

申请号：US17935035

申请日：2022-09-23

Applicant: Harbin Institute of Technology

Inventor： Xinxin Ma

IPC: C23C14/48 ,  C23C14/02

Abstract: A plasma source ion implanter with a preparation chamber for linear or cross transferring workpiece is provided to solve the problem of low production efficiency of an existing single vacuum chamber plasma source ion implanter. The ion implanter includes a preparation chamber, an implantation chamber and a workpiece transferring chamber. The implantation chamber is provided to maintain a high vacuum condition all the time, and the time for pre-vacuuming the base vacuum is ignored. The ion implanter with dual chamber configuration is able to greatly shorten the production cycle. The structural configurations of the preparation chamber and the implantation chamber are basically the same, and are adapted to be used independently when ion implantation is required for a long time.