公开(公告)号：US09573243B2

公开(公告)日：2017-02-21

申请号：US14532338

申请日：2014-11-04

Applicant: Headway Technologies, Inc.

Inventor： Terry Moore ,  Brant Nease

IPC: C03C15/00 ,  C03C25/68 ,  H01L21/302 ,  H01L21/461 ,  H01L21/311 ,  B24B37/013 ,  B24B49/12 ,  H01L21/321 ,  H01L21/3105 ,  H01L21/66 ,  B81C99/00

CPC classification number: B24B37/013 ,  B24B49/12 ,  B81C99/0065 ,  B81C2201/0104 ,  H01L21/302 ,  H01L21/31053 ,  H01L21/3212 ,  H01L22/12 ,  H01L22/26

Abstract: An adaptive feedback control method is provided for a chemical mechanical polish process to minimize a dielectric layer clearing time difference between two annular regions on a substrate. An optical system with an optical window passes below the polishing pad and detects reflected light interference signals from at least two annular regions. A pre-clearing time difference is determined and is used to calculate an adjustment to one or both of a CMP head membrane pressure and a retaining ring pressure. The pressure adjustment is applied before the end of the polish cycle to avoid the need for a second polish cycle and to reduce a dishing difference and a resistance difference in a metal layer in the at least two annular regions. In some embodiments, a second pressure adjustment is performed before the end of the cycle and different CMP head membrane pressure adjustments are made in different pressure zones.

Abstract translation: 提供了一种用于化学机械抛光工艺的自适应反馈控制方法，以最小化介电层清除衬底上的两个环形区域之间的时间差。 具有光学窗口的光学系统通过抛光垫下方并且检测来自至少两个环形区域的反射光干涉信号。 确定预清除时间差，并用于计算对CMP头膜压力和保持环压力之一或两者的调节。 在抛光循环结束之前施加压力调节，以避免需要第二抛光循环并且减少至少两个环形区域中的金属层中的凹陷差和电阻差。 在一些实施例中，在循环结束之前执行第二压力调节，并且在不同的压力区域中进行不同的CMP头部膜压力调节。

公开(公告)号：US20160121451A1

公开(公告)日：2016-05-05

申请号：US14532338

申请日：2014-11-04

Applicant: Headway Technologies, Inc.

Inventor： Terry Moore ,  Brant Nease

IPC: B24B37/013 ,  B24B49/12

CPC classification number: B24B37/013 ,  B24B49/12 ,  B81C99/0065 ,  B81C2201/0104 ,  H01L21/302 ,  H01L21/31053 ,  H01L21/3212 ,  H01L22/12 ,  H01L22/26

Abstract: An adaptive feedback control method is provided for a chemical mechanical polish process to minimize a dielectric layer clearing time difference between two annular regions on a substrate. An optical system with an optical window passes below the polishing pad and detects reflected light interference signals from at least two annular regions. A pre-clearing time difference is determined and is used to calculate an adjustment to one or both of a CMP head membrane pressure and a retaining ring pressure. The pressure adjustment is applied before the end of the polish cycle to avoid the need for a second polish cycle and to reduce a dishing difference and a resistance difference in a metal layer in the at least two annular regions. In some embodiments, a second pressure adjustment is performed before the end of the cycle and different CMP head membrane pressure adjustments are made in different pressure zones.

Abstract translation: 提供了一种用于化学机械抛光工艺的自适应反馈控制方法，以最小化介电层清除衬底上的两个环形区域之间的时间差。 具有光学窗口的光学系统通过抛光垫下方并且检测来自至少两个环形区域的反射光干涉信号。 确定预清除时间差，并用于计算对CMP头膜压力和保持环压力之一或两者的调节。 在抛光循环结束之前施加压力调节，以避免需要第二抛光循环并且减少至少两个环形区域中的金属层中的凹陷差和电阻差。 在一些实施例中，在循环结束之前执行第二压力调节，并且在不同的压力区域中进行不同的CMP头部膜压力调节。