公开(公告)号：US11056644B2

公开(公告)日：2021-07-06

申请号：US16679355

申请日：2019-11-11

Applicant: Huazhong University of Science and Technology

Inventor： Xiangshui Miao ,  Hao Tong ,  Lifan Ma

IPC: G11C11/00 ,  H01L45/00 ,  G11C13/00

Abstract: A phase-change memory cell, including, in sequence in the following order: a first electrode layer, a switching layer comprising vanadium oxide (VOx) material, a phase-change material layer, and a second electrode layer, is provided. The switching layer is adapted to control the phase-change material layer to switch between a crystalline state and an amorphous state when a voltage is applied to the first electrode layer and the second electrode layer.