公开(公告)号：US06878900B2

公开(公告)日：2005-04-12

申请号：US10182127

申请日：2001-01-25

Applicant: Paul B. Corkum ,  Emmanuel Dupont ,  Hui Chun Liu ,  Xiaonong Zhu

Inventor： Paul B. Corkum ,  Emmanuel Dupont ,  Hui Chun Liu ,  Xiaonong Zhu

IPC: B23K26/03 ,  B23K26/06 ,  G03F1/00 ,  H01L21/768 ,  B23K26/38

CPC classification number: H01L21/76894 ,  B23K26/032 ,  B23K26/0624 ,  B23K2103/10 ,  G03F1/72

Abstract: A method of accurately and precisely providing desired functionality to an electronic or opto-electronic component is disclosed in which a Femtosecond laser pulse is used to ablate material from a surface of or from within a component. The component is in active operation during the ablation process in order to facilitate the ablation process. The process also involves detection and feedback to indicate when a repair is sufficiently complete. The detection is also performed while the component is powered allowing in-situ detection and ablation. Of course, forms of facilitation other than feedback such as monitoring are also applicable to the invention.

Abstract translation: 公开了一种准确且精确地向电子或光电子部件提供期望的功能的方法，其中使用飞秒激光脉冲来从组件的表面或从组件的表面烧蚀材料。 组件在消融过程中处于主动操作，以便于消融过程。 该过程还涉及检测和反馈以指示修复何时足够完整。 在组件通电的同时也进行检测，从而允许原位检测和消融。 当然，除了诸如监视之类的反馈之外，辅助形式也适用于本发明。

公开(公告)号：US20050083567A1

公开(公告)日：2005-04-21

申请号：US10685538

申请日：2003-10-16

Applicant: Hui Chun Liu ,  Dayan Ban ,  Hui Luo

Inventor： Hui Chun Liu ,  Dayan Ban ,  Hui Luo

IPC: G02B23/12 ,  G02F2/02 ,  H01L27/15 ,  H01L31/14 ,  H01L31/18 ,  H01L33/08 ,  H04N5/33

CPC classification number: H01L31/173 ,  H01L27/15 ,  H01L31/02327 ,  H01L31/0352 ,  H01L33/08

Abstract: A wavelength conversion device includes a photodetector for generating a photocurrent in response to the detection of radiation at a first wavelength. An avalanche multiplier amplifies the signal photocurrent and feeds this to a light emitting element that produces radiation at a second wavelength shorter than the first wavelength and corresponding to the detected radiation at the first wavelength. The components are assembled together in an integrated stacked arrangement either by epitaxial growth or wafer fusion of the individual components. The device is useful as an image intensifier or thermal imaging device.

Abstract translation: 波长转换装置包括用于响应于第一波长的辐射的检测而产生光电流的光电检测器。 雪崩乘法器放大信号光电流并将其馈送到发光元件，该发光元件产生比第一波长短的第二波长并且对应于第一波长处的检测到的辐射的辐射。 通过单独部件的外延生长或晶片熔合，组件以集成的堆叠布置组装在一起。 该装置可用作图像增强器或热成像装置。

公开(公告)号：US06576490B2

公开(公告)日：2003-06-10

申请号：US10014478

申请日：2001-12-14

Applicant: Margaret Buchanan ,  Martin Byloos ,  Shen Chiu ,  Emmanuel Dupont ,  Mae Gao ,  Hui Chun Liu ,  Chun-ying Song

Inventor： Margaret Buchanan ,  Martin Byloos ,  Shen Chiu ,  Emmanuel Dupont ,  Mae Gao ,  Hui Chun Liu ,  Chun-ying Song

IPC: H01L2100

CPC classification number: H01L27/14694 ,  B82Y20/00 ,  H01L27/156 ,  H01L31/0304 ,  H01L31/035236 ,  Y02E10/544 ,  Y02P70/521

Abstract: The present invention relates to a method for micro-fabricating a pixelless thermal imaging device. The imaging device up-converts a sensed 2-dimensional M/FIR image into a 2-dimensional image in the NIR to visible spectrum in dependence thereupon. A plurality of layers forming an integrated QWIP-LED wafer are crystallographically grown on a surface of a first substrate. The layers comprise an etch stop layer, a bottom contact layer, a plurality of layers forming a QWIP and a LED, and a top contact layer. At the top of the QWIP-LED wafer an optical coupler such as a diffraction grating for coupling at least a portion of incident M/FIR light into modes having an electric field component perpendicular to quantum wells of the QWIP is provided. In following processing steps the first substrate and the etch stop layer are removed. Various different thermal imaging devices are manufactured by changing the order of manufacturing steps, omitting some steps or using different materials. Therefore, it is possible using a same manufacturing equipment for producing a large variety of different imaging devices considerably reducing manufacturing costs.

Abstract translation: 本发明涉及一种用于微型制造无像差热成像装置的方法。 成像装置将所感测的二维M / FIR图像上变换为NIR中的二维图像，依赖于可见光谱。 形成集成的QWIP-LED晶片的多个层在第一基板的表面上晶体生长。 这些层包括蚀刻停止层，底部接触层，形成QWIP的多个层和LED以及顶部接触层。 在QWIP-LED晶片的顶部，提供了诸如用于将入射的M / FIR光的至少一部分耦合到具有垂直于QWIP的量子阱的电场分量的模式的衍射光栅的光耦合器。 在随后的处理步骤中，去除第一衬底和蚀刻停止层。 通过改变制造步骤的顺序，省略一些步骤或使用不同的材料来制造各种不同的热成像装置。 因此，可以使用相同的制造设备来生产大量不同的成像装置，从而大大降低制造成本。

公开(公告)号：US07079307B2

公开(公告)日：2006-07-18

申请号：US10685538

申请日：2003-10-16

Applicant: Hui Chun Liu ,  Dayan Ban ,  Hui Luo

Inventor： Hui Chun Liu ,  Dayan Ban ,  Hui Luo

IPC: G02F2/02 ,  H01S5/50

CPC classification number: H01L31/173 ,  H01L27/15 ,  H01L31/02327 ,  H01L31/0352 ,  H01L33/08

Abstract: A wavelength conversion device includes a photodetector for generating a photocurrent in response to the detection of radiation at a first wavelength. An avalanche multiplier amplifies the signal photocurrent and feeds this to a light emitting element that produces radiation at a second wavelength shorter than the first wavelength and corresponding to the detected radiation at the first wavelength. The components are assembled together in an integrated stacked arrangement either by epitaxial growth or wafer fusion of the individual components. The device is useful as an image intensifier or thermal imaging device.

Abstract translation: 波长转换装置包括用于响应于第一波长的辐射的检测而产生光电流的光电检测器。 雪崩乘法器放大信号光电流并将其馈送到发光元件，该发光元件产生比第一波长短的第二波长并且对应于第一波长处的检测到的辐射的辐射。 通过单独部件的外延生长或晶片熔合，组件以集成的堆叠布置组装在一起。 该装置可用作图像增强器或热成像装置。

公开(公告)号：US06750072B2

公开(公告)日：2004-06-15

申请号：US10407466

申请日：2003-04-07

Applicant: Margaret Buchanan ,  Martin Byloos ,  Shen Chiu ,  Emmanuel Dupont ,  Mae Gao ,  Hui Chun Liu ,  Chun-ying Song

Inventor： Margaret Buchanan ,  Martin Byloos ,  Shen Chiu ,  Emmanuel Dupont ,  Mae Gao ,  Hui Chun Liu ,  Chun-ying Song

IPC: H01L2100

CPC classification number: H01L27/14694 ,  B82Y20/00 ,  H01L27/156 ,  H01L31/0304 ,  H01L31/035236 ,  Y02E10/544 ,  Y02P70/521

Abstract: The present invention relates to a method for micro-fabricating a pixelless thermal imaging device. The imaging device up-converts a sensed 2-dimensional M/FIR image into a 2-dimensional image in the NIR to visible spectrum in dependence thereupon. A plurality of layers forming an integrated QWIP-LED wafer are crystallographically grown on a surface of a first substrate. The layers comprise an etch stop layer, a bottom contact layer, a plurality of layers forming a QWIP and a LED, and a top contact layer. At the top of the QWIP-LED wafer an optical coupler such as a diffraction grating for coupling at least a portion of incident M/FIR light into modes having an electric field component perpendicular to quantum wells of the QWIP is provided. In following processing steps the first substrate and the etch stop layer are removed. Various different thermal imaging devices are manufactured by changing the order of manufacturing steps, omitting some steps or using different materials. Therefore, it is possible using a same manufacturing equipment for producing a large variety of different imaging devices considerably reducing manufacturing costs.

Abstract translation: 本发明涉及一种用于微型制造无像差热成像装置的方法。 成像装置将所感测的二维M / FIR图像上变换为NIR中的二维图像，依赖于可见光谱。 形成集成的QWIP-LED晶片的多个层在第一基板的表面上晶体生长。 这些层包括蚀刻停止层，底部接触层，形成QWIP的多个层和LED以及顶部接触层。 在QWIP-LED晶片的顶部，提供了诸如用于将入射的M / FIR光的至少一部分耦合到具有垂直于QWIP的量子阱的电场分量的模式的衍射光栅的光耦合器。 在随后的处理步骤中，去除第一衬底和蚀刻停止层。 通过改变制造步骤的顺序，省略一些步骤或使用不同的材料来制造各种不同的热成像装置。 因此，可以使用相同的制造设备来生产大量不同的成像装置，从而大大降低制造成本。

公开(公告)号：US06239449B1

公开(公告)日：2001-05-29

申请号：US09291020

申请日：1999-04-14

Applicant: Simon Fafard ,  Hui Chun Liu

Inventor： Simon Fafard ,  Hui Chun Liu

IPC: H01L2906

CPC classification number: H01L31/0352 ,  B82Y10/00

Abstract: A photodetector capable of normal incidence detection over a broad range of long wavelength light signals to efficiently convert infrared light into electrical signals. It is capable of converting long wavelength light signals into electrical signals with direct normal incidence sensitivity without the assistance of light coupling devices or schemes. In the apparatus, stored charged carriers are ejected by photons from quantum dots, then flow over the other barrier and quantum dot layers with the help of an electric field produced with a voltage applied to the device, producing a detectable photovoltage and photocurrent. The photodetector has multiple layers of materials including at least one quantum dot layer between an emitter layer and a collector layer, with a barrier layer between the quantum dot layer and the emitter layer, and another barrier layer between the quantum dot layer and the collector.

Abstract translation: 一种能够在宽范围的长波长光信号上进行正常入射检测以有效地将红外光转换为电信号的光电探测器。 它能够将长波长光信号转换成具有直接法向入射灵敏度的电信号，而无需光耦合器件或方案。 在该装置中，存储的带电荷的载流子由来自量子点的光子喷射，然后借助于施加到该器件的电压产生的电场，产生可检测的光电压和光电流，在另一个势垒和量子点层上流动。 光电检测器具有多层材料，其包括在发射极层和集电极层之间的至少一个量子点层，量子点层和发射极层之间的阻挡层以及量子点层和集电极之间的另一阻挡层。

公开(公告)号：US5646421A

公开(公告)日：1997-07-08

申请号：US735314

申请日：1996-10-25

Applicant: Hui Chun Liu

Inventor： Hui Chun Liu

IPC: G01J1/16 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/101 ,  H01L31/108 ,  H01L29/06

CPC classification number: B82Y20/00 ,  H01L31/035236

Abstract: A quantum well intersubband infrared (IR) photodetector has a spectral response tunable by an external voltage. The photodetector consists of multiple doped quantum wells with different well widths and barrier heights. The preferred embodiment is made by repeating the whole structure of the active region of a multiple quantum well intersubband IR photodetector. Differences between repeats or groups of well widths and barrier heights result in differences in the spectral IR response of the different repeats. The device resistance of a given group is designed to be very different from those for all the other groups. As a function of an applied voltage, the repeat with the highest resistance will be turned on to detect IR with the response peak at a wavelength .lambda..sub.1. Subsequently, the next highest resistance repeat will turn on when increasing voltage with its response peaked at .lambda..sub.2, and so on. Since .lambda..sub.1, .lambda..sub.2 are different from each other, a voltage tunable multicolor photodetector is realized.

Abstract translation: 量子阱子带内红外（IR）光电探测器具有通过外部电压可调谐的光谱响应。 光电检测器由具有不同阱宽度和势垒高度的多个掺杂量子阱组成。 优选实施例是通过重复多量子阱子带间IR光电检测器的有源区的整个结构来进行的。 重复或阱宽度组和屏障高度之间的差异导致不同重复的光谱IR响应的差异。 给定组的设备电阻设计为与所有其他组的设备电阻非常不同。 作为施加电压的函数，将打开具有最高电阻的重复，以在波长λ1处具有响应峰值来检测IR。随后，当增加电压时，下一个最高电阻重复将导通，其响应在λ 2，等等。 由于λ1，λ2彼此不同，所以实现了电压可调多色光电检测器。