公开(公告)号：US20130071985A1

公开(公告)日：2013-03-21

申请号：US13676433

申请日：2012-11-14

Applicant: Hynix Semiconductor Inc.

Inventor： Jang Uk LEE

IPC: H01L49/02

CPC classification number: H01L28/20 ,  H01L27/2409 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

Abstract: A phase change memory device capable of reducing disturbances between adjacent PRAM memory cells and a fabrication method are presented. The phase change memory device includes word lines, heating electrodes, an interlayer insulating layer, and a phase change lines. The word lines are formed on a semiconductor substrate and extend in parallel with a constant space. The heating electrodes are electrically connected to the plurality of word lines. The interlayer insulating layer insulates the heating electrodes. The phase change lines extend in a direction orthogonal to the word line and are electrically connected to the heating electrodes. Curves are formed on a surface of the interlayer insulating layer between the word lines such that the effective length of the phase change layer between adjacent heating electrodes is larger than the physical distance between the adjacent heating electrodes.

Abstract translation: 提出了能够减少相邻PRAM存储单元之间的干扰的相变存储器件和制造方法。 相变存储器件包括字线，加热电极，层间绝缘层和相变线。 字线形成在半导体衬底上并且以恒定的空间平行延伸。 加热电极与多条字线电连接。 层间绝缘层绝热加热电极。 相变线在与字线正交的方向上延伸并且电连接到加热电极。 在字线之间的层间绝缘层的表面上形成曲线，使得相邻加热电极之间的相变层的有效长度大于相邻加热电极之间的物理距离。