公开(公告)号：US12188895B2

公开(公告)日：2025-01-07

申请号：US17692717

申请日：2022-03-11

Applicant: IMEC VZW

Inventor： David Barge ,  Bert Du Bois ,  Simone Severi ,  Ashesh Ray Chaudhuri

IPC: H01L21/00 ,  G01N27/414

Abstract: A method for forming a nanopore transistor and a nanopore transistor is provided. The method includes: (a) forming an aperture in a filler material by: (i) providing a fin comprising a semiconductor layer and a top layer; (ii) patterning the top layer to form a pillar; (iii) embedding the pillar in a filler material; (iv) removing the pillar, leaving an aperture; (v) lining the aperture with a spacer material; (b) forming a nanopore by etching through the aperture; (b) lining the nanopore with a dielectric, (c) forming a source and a drain by either: between steps a.ii and a.iii, doping the bottom semiconductor layer by using the pillar as a mask, or after step c, filling the aperture with a sealing material, thereby forming a post; removing the filler material; doping the bottom semiconductor layer by using the post as a mask; and removing the sealing material.

公开(公告)号：US20220334079A1

公开(公告)日：2022-10-20

申请号：US17692717

申请日：2022-03-11

Applicant: IMEC VZW

Inventor： David Barge ,  Bert Du Bois ,  Simone Severi ,  Ashesh Ray Chaudhuri

IPC: G01N27/414

Abstract: A method for forming a nanopore transistor and a nanopore transistor is provided. The method includes: (a) forming an aperture in a filler material by: (i) providing a fin comprising a semiconductor layer and a top layer; (ii) pattering the top layer to form a pillar; (iii) embedding the pillar in a filler material; (iv) removing the pillar, leaving an aperture; (v) lining the aperture with a spacer material; (b) forming a nanopore by etching through the aperture; (b) lining the nanopore with a dielectric, (c) forming a source and a drain by either: between steps a.ii and a.iii, doping the bottom semiconductor layer by using the pillar as a mask, or after step c, filling the aperture with a sealing material, thereby forming a post; removing the filler material; doping the bottom semiconductor layer by using the post as a mask; and removing the sealing material.

公开(公告)号：US20250110080A1

公开(公告)日：2025-04-03

申请号：US18979912

申请日：2024-12-13

Applicant: IMEC VZW

Inventor： David Barge ,  Bert Du Bois ,  Simone Severi ,  Ashesh Ray Chaudhuri

IPC: G01N27/414

Abstract: A method for forming a nanopore transistor and a nanopore transistor is provided. The method includes: (a) forming an aperture in a filler material by: (i) providing a fin comprising a semiconductor layer and a top layer; (ii) pattering the top layer to form a pillar; (iii) embedding the pillar in a filler material; (iv) removing the pillar, leaving an aperture; (v) lining the aperture with a spacer material; (b) forming a nanopore by etching through the aperture; (b) lining the nanopore with a dielectric, (c) forming a source and a drain by either: between steps a.ii and a.iii, doping the bottom semiconductor layer by using the pillar as a mask, or after step c, filling the aperture with a sealing material, thereby forming a post; removing the filler material; doping the bottom semiconductor layer by using the post as a mask; and removing the sealing material.

公开(公告)号：US11735645B2

公开(公告)日：2023-08-22

申请号：US17099339

申请日：2020-11-16

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R & D

Inventor： Koen Martens ,  Sybren Santermans ,  Geert Hellings ,  David Barge

IPC: H01L29/66 ,  G01N27/414

CPC classification number: H01L29/6656 ,  G01N27/4145

Abstract: A method for forming a sensor is provided. The method includes: providing an active region comprising a channel having: a length, and a periphery consisting of one or more surfaces having said length, said periphery comprising a first part and a second part, each part having said length, the first part representing from 10 to 75% of the area of the periphery and the second part representing from 25 to 90% of the area of the periphery; providing a first dielectric structure on the entire first part, the first dielectric structure having a maximal equivalent oxide thickness; and providing a second dielectric structure on the entire second part, the second dielectric structure having a minimal equivalent oxide thickness larger than the maximal equivalent oxide thickness of the first dielectric structure.

公开(公告)号：US20210159321A1

公开(公告)日：2021-05-27

申请号：US17099339

申请日：2020-11-16

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R & D

Inventor： Koen Martens ,  Sybren Santermans ,  Geert Hellings ,  David Barge

IPC: H01L29/66 ,  G01N27/414

Abstract: A method for forming a sensor is provided. The method includes: providing an active region comprising a channel having: a length, and a periphery consisting of one or more surfaces having said length, said periphery comprising a first part and a second part, each part having said length, the first part representing from 10 to 75% of the area of the periphery and the second part representing from 25 to 90% of the area of the periphery; providing a first dielectric structure on the entire first part, the first dielectric structure having a maximal equivalent oxide thickness; and providing a second dielectric structure on the entire second part, the second dielectric structure having a minimal equivalent oxide thickness larger than the maximal equivalent oxide thickness of the first dielectric structure.