公开(公告)号：US20250126959A1

公开(公告)日：2025-04-17

申请号：US18908948

申请日：2024-10-08

Applicant: IMEC VZW

Inventor： Joo Hyoung KIM ,  Epimitheas GEORGITZIKIS ,  Jan GENOE ,  Jiwon LEE

IPC: H10K39/32

Abstract: According to an aspect of the present inventive concept there is provided a photo-sensitive device comprising: a stack forming a photodiode, which stack comprises a photon-absorbing layer, wherein the photon-absorbing layer is configured to generate charges in response to incident light on the photo-sensitive device, defining a photo-sensitive region, wherein a guard ring structure is arranged along a boundary of the photo-sensitive region, said guard ring structure comprising a third electrode layer being physically and electrically separated from the first electrode layer, and an insulator layer, wherein the photo-sensitive device is configured to apply a bias voltage to provide an electric potential difference between the photo-sensitive region and the guard ring structure, to thereby electrically suppress crosstalk.