公开(公告)号：US10014178B2

公开(公告)日：2018-07-03

申请号：US15354489

申请日：2016-11-17

Applicant: IMEC VZW

Inventor： Wilfried Vandervorst ,  Janusz Bogdanowicz

IPC: H01L21/00 ,  H01L21/268 ,  H01L21/8234 ,  H01L21/225 ,  H01L29/06 ,  H01L21/02

CPC classification number: H01L21/268 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/0259 ,  H01L21/02667 ,  H01L21/02675 ,  H01L21/225 ,  H01L21/2252 ,  H01L21/2258 ,  H01L21/823431 ,  H01L29/0665 ,  H01L29/66795

Abstract: The present disclosure is related to a method of fabricating a semiconductor device involving the production of at least two non-parallel nano-scaled structures on a substrate. These structures are heated to different temperatures by exposing them simultaneously to polarized light having a wavelength and polarization such that a difference in absorption of light occurs in the first and second nanostructure. In some cases the light is polarized in a plane that is parallel to one of the structures. The present disclosure may provide differential heating of semiconductor structures of different materials, such as Ge and Si fins.

公开(公告)号：US12216057B2

公开(公告)日：2025-02-04

申请号：US17371609

申请日：2021-07-09

Applicant: IMEC VZW

Inventor： Thomas Nuytten ,  Janusz Bogdanowicz

IPC: G01N21/65 ,  H01L21/66

Abstract: A method and apparatus are provided for a spectroscopic measurement for determining a lateral recess depth in the sidewall of a microstructure. The structure is formed on a larger substrate with the sidewall in an upright position relative to the substrate, and the recess extends essentially parallel to the substrate. The recess may be an etch depth obtained by etching a first layer relative to two adjacent layers, the layers oriented parallel to the substrate, the etch process progressing inward from the sidewall. An incident energy beam falling on the structure generates a spectroscopic response captured and processed respectively by a detector and a processing unit. The response comprises one or more peaks related to the material or materials of the substrate and the structure. According to the method, a parameter is derived from said one or more peaks, that is representative of the lateral recess depth.

公开(公告)号：US20220018781A1

公开(公告)日：2022-01-20

申请号：US17371609

申请日：2021-07-09

Applicant: IMEC VZW

Inventor： Thomas Nuytten ,  Janusz Bogdanowicz

IPC: G01N21/65 ,  H01L21/66

Abstract: A method and apparatus are provided for a spectroscopic measurement for determining a lateral recess depth in the sidewall of a microstructure. The structure is formed on a larger substrate with the sidewall in an upright position relative to the substrate, and the recess extends essentially parallel to the substrate. The recess may be an etch depth obtained by etching a first layer relative to two adjacent layers, the layers oriented parallel to the substrate, the etch process progressing inward from the sidewall. An incident energy beam falling on the structure generates a spectroscopic response captured and processed respectively by a detector and a processing unit. The response comprises one or more peaks related to the material or materials of the substrate and the structure. According to the method, a parameter is derived from said one or more peaks, that is representative of the lateral recess depth.

公开(公告)号：US20170178910A1

公开(公告)日：2017-06-22

申请号：US15354489

申请日：2016-11-17

Applicant: IMEC VZW

Inventor： Wilfried Vandervorst ,  Janusz Bogdanowicz

IPC: H01L21/268 ,  H01L21/02 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/225

CPC classification number: H01L21/268 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/0259 ,  H01L21/02667 ,  H01L21/02675 ,  H01L21/225 ,  H01L21/2252 ,  H01L21/2258 ,  H01L21/823431 ,  H01L29/0665

Abstract: The present disclosure is related to a method of fabricating a semiconductor device involving the production of at least two non-parallel nano-scaled structures on a substrate. These structures are heated to different temperatures by exposing them simultaneously to polarized light having a wavelength and polarization such that a difference in absorption of light occurs in the first and second nanostructure. In some cases the light is polarized in a plane that is parallel to one of the structures. The present disclosure may provide differential heating of semiconductor structures of different materials, such as Ge and Si fins.