公开(公告)号：US20210020516A1

公开(公告)日：2021-01-21

申请号：US16931230

申请日：2020-07-16

Applicant: IMEC vzw

Inventor： Boon Teik Chan ,  Yong Kong Siew ,  Juergen Boemmels

IPC: H01L21/8234 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L21/027

Abstract: In one aspect, a method can include forming, by self-aligned multiple patterning, a first pattern of regularly spaced mandrels on a layer to be patterned; forming hard mask spacers on sidewalls of the mandrels, thereby forming a second pattern formed of assemblies comprising a mandrel and hard mask spacers on sidewalls thereof; and etching the second pattern in the layer to be patterned.

公开(公告)号：US11488826B2

公开(公告)日：2022-11-01

申请号：US16931230

申请日：2020-07-16

Applicant: IMEC vzw

Inventor： Boon Teik Chan ,  Yong Kong Siew ,  Juergen Boemmels

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/8234 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78

Abstract: In one aspect, a method can include forming, by self-aligned multiple patterning, a first pattern of regularly spaced mandrels on a layer to be patterned; forming hard mask spacers on sidewalls of the mandrels, thereby forming a second pattern formed of assemblies comprising a mandrel and hard mask spacers on sidewalls thereof; and etching the second pattern in the layer to be patterned.