公开(公告)号：US20140151854A1

公开(公告)日：2014-06-05

申请号：US13691475

申请日：2012-11-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Manfred Engelhardt ,  Frank Hoffmann

IPC: H01L21/02 ,  H01L29/06

CPC classification number: H01L21/0203 ,  H01L21/304 ,  H01L21/7806 ,  H01L29/06 ,  H01L29/1608

Abstract: A method for separating a layer from a substrate. The method includes providing a plurality of trenches extending from a first main surface of the substrate into the substrate. A heat treatment of the substrate is performed such that edges of the trenches grow together at the first main surface to form a closed layer at the first main surface, wherein lower portions of the trenches form one or more cavities within the substrate. After that the closed layer is separated from the substrate along the one or more cavities.

Abstract translation: 一种从基板分离层的方法。 该方法包括提供从衬底的第一主表面延伸到衬底中的多个沟槽。 进行基板的热处理，使得沟槽的边缘在第一主表面一起生长以在第一主表面处形成封闭层，其中沟槽的下部在基板内形成一个或多个空腔。 之后，封闭层沿着一个或多个空腔与衬底分离。

公开(公告)号：US09812369B2

公开(公告)日：2017-11-07

申请号：US15083774

申请日：2016-03-29

Applicant: Infineon Technologies AG

Inventor： Frank Hoffmann ,  Dirk Manger ,  Andreas Pribil ,  Marc Probst ,  Stefan Tegen

IPC: H01L21/8249 ,  H01L27/06 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66 ,  H01L29/737

CPC classification number: H01L21/8249 ,  H01L27/0623 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/0804 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/66242 ,  H01L29/66272 ,  H01L29/7371

Abstract: A method comprises providing a substrate of a first conductive type and a layer stack arranged on the substrate. The layer stack comprises a first isolation layer, a sacrificial layer, and a second isolation layer. The layer stack comprises a window formed in the layer stack through the second isolation layer, the sacrificial layer and the first isolation layer up to a surface region of the substrate. The method comprises providing a collector layer. The method comprises providing a base layer on the collector layer within the window of the layer stack. The method comprises providing an emitter layer or an emitter layer stack comprising the emitter layer on the base layer within the window of the layer stack. The method further comprises selectively removing the emitter layer or the emitter layer stack at least up to the second isolation layer.

公开(公告)号：US10312159B2

公开(公告)日：2019-06-04

申请号：US15798972

申请日：2017-10-31

Applicant: Infineon Technologies AG

Inventor： Frank Hoffmann ,  Dirk Manger ,  Andreas Pribil ,  Marc Probst ,  Stefan Tegen

IPC: H01L21/8248 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66 ,  H01L29/737

Abstract: A method comprises providing a substrate of a first conductive type and a layer stack arranged on the substrate. The layer stack comprises a first isolation layer, a sacrificial layer, and a second isolation layer. The layer stack comprises a window formed in the layer stack through the second isolation layer, the sacrificial layer and the first isolation layer up to a surface region of the substrate. The method comprises providing a collector layer. The method comprises providing a base layer on the collector layer within the window of the layer stack. The method comprises providing an emitter layer or an emitter layer stack comprising the emitter layer on the base layer within the window of the layer stack. The method further comprises selectively removing the emitter layer or the emitter layer stack at least up to the second isolation layer.