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公开(公告)号：US10571527B2
公开(公告)日：2020-02-25
申请号：US15602923
申请日：2017-05-23
Applicant: Infineon Technologies AG
Inventor： Dieter Suess , Hubert Brueckl , Klemens Pruegl , Wolfgang Raberg , Armin Satz
Abstract: The present disclosure relates to a magnetic sensor device having at least one magneto-resistive structure. The magneto-resistive structure comprises a magnetic free layer configured to generate a closed flux magnetization pattern in the free layer, and a magnetic reference layer having non-closed flux reference magnetization pattern; and a magnetic flux concentrator configured to increase a flux density of an external magnetic field in the magnetic free layer.
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公开(公告)号：US20200006418A1
公开(公告)日：2020-01-02
申请号：US16566171
申请日：2019-09-10
Applicant: Infineon Technologies AG
Inventor： Dirk Meinhold , Emanuele Bruno Bodini , Felix Braun , Hermann Gruber , Uwe Hoeckele , Dirk Offenberg , Klemens Pruegl , Ines Uhlig
IPC: H01L27/146 , H01L27/148
Abstract: Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.
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公开(公告)号：US20180003776A1
公开(公告)日：2018-01-04
申请号：US15602923
申请日：2017-05-23
Applicant: Infineon Technologies AG
Inventor： Dieter Suess , Hubert Brueckl , Klemens Pruegl , Wolfgang Raberg , Armin Satz
CPC classification number: G01R33/0011 , G01R33/093 , G01R33/098
Abstract: The present disclosure relates to a magnetic sensor device having at least one magneto-resistive structure. The magneto-resistive structure comprises a magnetic free layer configured to generate a closed flux magnetization pattern in the free layer, and a magnetic reference layer having non-closed flux reference magnetization pattern; and a magnetic flux concentrator configured to increase a flux density of an external magnetic field in the magnetic free layer.
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公开(公告)号：US20170301721A1
公开(公告)日：2017-10-19
申请号：US15586498
申请日：2017-05-04
Applicant: Infineon Technologies AG
Inventor： Dirk Meinhold , Emanuele Bruno Bodini , Felix Braun , Hermann Gruber , Uwe Hoeckele , Dirk Offenberg , Klemens Pruegl , Ines Uhlig
IPC: H01L27/146 , H01L27/148
CPC classification number: H01L27/14689 , H01L27/14609 , H01L27/14627 , H01L27/14629 , H01L27/14687 , H01L27/14806
Abstract: Embodiments related to a method of manufacturing of an imager and an imager device are shown and depicted.
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公开(公告)号：US09570676B2
公开(公告)日：2017-02-14
申请号：US15215631
申请日：2016-07-21
Applicant: Infineon Technologies AG
Inventor： Stefan Kolb , Klemens Pruegl , Juergen Zimmer
CPC classification number: H01L27/22 , G01R33/07 , G01R33/09 , G01R33/093 , G01R33/098 , H01L23/5226 , H01L23/528 , H01L23/552 , H01L43/02 , H01L43/04 , H01L43/06 , H01L43/08 , H01L43/12 , H01L43/14
Abstract: In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.
Abstract translation: 在制造磁阻传感器模块的方法中，首先提供从半导体衬底和金属 - 绝缘体布置中的复合布置，其中半导体电路布置与半导体衬底的主表面相邻地集成在其中，其中 金属绝缘体布置在半导体衬底的主表面上并且包括结构化金属片和至少部分地围绕结构化金属片的绝缘材料，其中结构化金属片电连接到半导体电路装置。 然后，将磁阻传感器结构施加到复合布置的绝缘材料的表面上，最后建立磁阻传感器结构和结构金属片之间的电连接，使得磁阻传感器结构连接到集成电路 安排。
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Patent Agency Ranking
公开(公告)号：US20160025819A1
公开(公告)日：2016-01-28
申请号：US14804454
申请日：2015-07-21
Applicant: Infineon Technologies AG
Inventor： Klemens Pruegl
CPC classification number: G01R33/0005 , G01R33/09
Abstract: Sensor devices and methods are provided where a second magnetoresistive sensor stack is provided on top of a first magnetoresistive sensor stack.
Abstract translation: 提供传感器装置和方法，其中第二磁阻传感器堆叠设置在第一磁阻传感器堆叠的顶部。
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公开(公告)号：US20130239404A1
公开(公告)日：2013-09-19
申请号：US13888185
申请日：2013-05-06
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Carsten Ahrens , Gunther Mackh , Klemens Pruegl
CPC classification number: H01F27/2804 , H01F5/00 , H01F17/0006 , H01F17/04 , H01F27/255 , H01F41/046 , H01F2017/048 , H01L23/5227 , H01L27/08 , H01L28/10 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48471 , H01L2924/00011 , H01L2924/01047 , H01L2924/30107 , H05K3/10 , Y10T29/49075 , Y10T29/49155 , H01L2924/00014 , H01L2924/00 , H01L2924/01005
Abstract: In one embodiment, an inductor has a substrate, a conductor disposed above the substrate and a seamless ferromagnetic material surrounding at least a first portion of the conductor.
Abstract translation: 在一个实施例中，电感器具有衬底，布置在衬底上方的导体和围绕导体的至少第一部分的无缝铁磁材料。
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公开(公告)号：US10006968B2
公开(公告)日：2018-06-26
申请号：US14804454
申请日：2015-07-21
Applicant: Infineon Technologies AG
Inventor： Klemens Pruegl
CPC classification number: G01R33/0005 , G01R33/09
Abstract: Sensor devices and methods are provided where a second magnetoresistive sensor stack is provided on top of a first magnetoresistive sensor stack.
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公开(公告)号：US09812496B2
公开(公告)日：2017-11-07
申请号：US15391111
申请日：2016-12-27
Applicant: Infineon Technologies AG
Inventor： Stefan Kolb , Klemens Pruegl , Juergen Zimmer
IPC: H01L43/12 , H01L27/22 , H01L23/528 , H01L23/522 , H01L43/02 , H01L23/552 , H01L43/08 , G01R33/09
CPC classification number: H01L27/22 , G01R33/07 , G01R33/09 , G01R33/093 , G01R33/098 , H01L23/5226 , H01L23/528 , H01L23/552 , H01L43/02 , H01L43/04 , H01L43/06 , H01L43/08 , H01L43/12 , H01L43/14
Abstract: In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.
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公开(公告)号：US09659992B2
公开(公告)日：2017-05-23
申请号：US14186390
申请日：2014-02-21
Applicant: Infineon Technologies AG
Inventor： Dirk Meinhold , Emanuele Bruno Bodini , Felix Braun , Hermann Gruber , Uwe Hoeckele , Dirk Offenberg , Klemens Pruegl , Ines Uhlig
IPC: H01L27/146 , H01L27/148
CPC classification number: H01L27/14689 , H01L27/14609 , H01L27/14627 , H01L27/14629 , H01L27/14687 , H01L27/14806
Abstract: Embodiments related to a method of manufacturing of an imager and an imager device are shown and depicted.
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