Abstract:
An autostereoscopic display apparatus is provided. The autostereoscopic display apparatus includes a liquid-crystal panel and a barrier cell. The barrier cell includes a first substrate, a second substrate, and a liquid-crystal layer. The first substrate includes a first electrode. The second substrate includes a second electrode and a third electrode, wherein the second and third electrodes are separated from each other. The liquid-crystal layer is disposed between the first and second substrates. A black region between the first and third electrodes is formed when a first voltage is applied to the first and second electrodes and a second voltage is applied to the third electrode.
Abstract:
An element substrate is provided, including a substrate, a metal layer, a planarization layer and a first conductive layer. The metal layer is disposed on the substrate. The planarization layer is located on the metal layer, wherein the planarization layer includes a contact hole, the contact hole has a continuous wall and a bottom, the bottom exposes the metal layer, and the bottom of the contact hole has a first width. The first conductive layer is located on the planarization layer, wherein the first conductive layer includes an opening, the opening exposes the contact hole, and the opening has a second width above the contact hole, wherein the relationship of the first width and the second width is modified to decrease illumination loss and to prevent problems of shot-circuiting and insufficient capacitance.
Abstract:
A thin film transistor substrate is provided. The TFT substrate comprises a substrate, a first metal layer, a first insulating layer, a channel layer, a second insulating layer and a gate layer. The first metal layer is disposed on the substrate, and comprises a first portion and a second portion which are separated from each other. The first insulating layer is disposed on the first metal layer. The channel layer is disposed on the first insulating layer. The second insulating layer is disposed on the channel layer. The gate layer is disposed on the second insulating layer. The first portion and the second portion of the first metal layer partially overlap the channel layer.