公开(公告)号：US20220375864A1

公开(公告)日：2022-11-24

申请号：US17835851

申请日：2022-06-08

Applicant: INVENSAS LLC

Inventor： Liang Wang ,  Rajesh Katkar

IPC: H01L23/538 ,  H01L23/00 ,  H01L25/065

Abstract: Apparatuses and methods are described. This apparatus includes a bridge die having first contacts on a die surface being in a molding layer of a reconstituted wafer. The reconstituted wafer has a wafer surface including a layer surface of the molding layer and the die surface. A redistribution layer on the wafer surface includes electrically conductive and dielectric layers to provide conductive routing and conductors. The conductors extend away from the die surface and are respectively coupled to the first contacts at bottom ends thereof. At least second and third IC dies respectively having second contacts on corresponding die surfaces thereof are interconnected to the bridge die and the redistribution layer. A first portion of the second contacts are interconnected to top ends of the conductors opposite the bottom ends thereof in part for alignment of the at least second and third IC dies to the bridge die.

公开(公告)号：US11387214B2

公开(公告)日：2022-07-12

申请号：US16712357

申请日：2019-12-12

Applicant: INVENSAS LLC

Inventor： Liang Wang ,  Rajesh Katkar

IPC: H01L25/065 ,  H01L23/31 ,  H01L25/00 ,  H01L21/56 ,  H01L21/768 ,  H01L23/00 ,  H01L25/16

Abstract: Apparatuses and methods are described. This apparatus includes a bridge die having first contacts on a die surface being in a molding layer of a reconstituted wafer. The reconstituted wafer has a wafer surface including a layer surface of the molding layer and the die surface. A redistribution layer on the wafer surface includes electrically conductive and dielectric layers to provide conductive routing and conductors. The conductors extend away from the die surface and are respectively coupled to the first contacts at bottom ends thereof. At least second and third IC dies respectively having second contacts on corresponding die surfaces thereof are interconnected to the bridge die and the redistribution layer. A first portion of the second contacts are interconnected to top ends of the conductors opposite the bottom ends thereof in part for alignment of the at least second and third IC dies to the bridge die.