公开(公告)号：US20200049573A1

公开(公告)日：2020-02-13

申请号：US16520449

申请日：2019-07-24

Applicant: Indian Institute of Science

Inventor： Vaishakh KEDAMBAIMOOLE ,  Pavithra B. JAIN ,  MANASA ,  Nagarjuna NEELLA ,  Rajanna KONANDUR ,  M M. NAYAK ,  Narasimhiah Subrahmanyam DINESH

IPC: G01K7/22 ,  G01K7/18 ,  H01C7/04 ,  H01C17/00

Abstract: The present disclosure generally relates to the field of resistive sensing. In particular, the present disclosure relates to a highly sensitive reduced graphene oxide-nickel (RGO—Ni) composite based fast response temperature sensor. Aspects of the present disclosure provide a method for fabrication of a highly sensitive reduced graphene oxide-nickel (RGO—Ni) composite-based temperature sensor. An aspect of the present disclosure provides a temperature sensor comprising: a substrate; and a composite film deposited onto said substrate, wherein the composite film comprises a reduced graphene oxide-nickel composite film. In an embodiment, the temperature sensor is cryo-compatible.