公开(公告)号：US20220415820A1

公开(公告)日：2022-12-29

申请号：US17850178

申请日：2022-06-27

Applicant: Infineon Technologies AG

Inventor： Christian Hammer ,  Matthias Mueller ,  Wolfgang Lehnert

IPC: H01L23/532 ,  H01L21/02 ,  H01L21/768 ,  H01L29/20 ,  C23C16/455

Abstract: A power semiconductor device includes a semiconductor body; a first load terminal at the semiconductor body; and a second load terminal at the semiconductor body. The power semiconductor device is configured to conduct a load current between the first load terminal and the second load terminal. The first load terminal has a first side and a second side adjoining the semiconductor body. The first load terminal includes: at the first side, an atomic layer deposition (ALD) layer; at the second side, a base layer including copper; and between the ALD layer and the base layer, a coupling layer that includes copper-silicon-nitride (CuSiN).