公开(公告)号：US20160332873A1

公开(公告)日：2016-11-17

申请号：US15223794

申请日：2016-07-29

Applicant: Infineon Technologies AG

Inventor： Andre Brockmeier ,  Christian Kalousek ,  Katharina Maier ,  Peter Zorn ,  Kai-Alexander Schreiber ,  Francesco Solazzi

IPC: B81C1/00 ,  B81C99/00

CPC classification number: B81C1/00619 ,  B32B37/0046 ,  B32B38/08 ,  B32B38/10 ,  B32B2457/14 ,  B81B7/008 ,  B81C1/0015 ,  B81C1/00238 ,  B81C1/00357 ,  B81C1/00492 ,  B81C99/0005 ,  B81C99/001 ,  B81C2201/0111 ,  B81C2201/0136 ,  B81C2201/014 ,  B81C2201/053 ,  B81C2203/0109 ,  B81C2203/031 ,  B81C2203/0735 ,  B81C2900/00 ,  Y10T156/15

Abstract: Methods, apparatuses and devices are described where a main wafer is irreversibly bonded to a carrier wafer and thinned to reduce a thickness of the main wafer, for example down to a thickness of 300 μm or below.