公开(公告)号：US12224175B2

公开(公告)日：2025-02-11

申请号：US17509256

申请日：2021-10-25

Applicant: Infineon Technologies AG

Inventor： Olaf Fiedler ,  Daniel Kai Simon

IPC: H01L21/02 ,  C23C16/24 ,  C23C16/448 ,  C23C16/52 ,  H01L21/687

Abstract: A method of forming a silicon layer includes introducing a source gas containing a precursor material and a carrier gas into a reactor, controlling a gas flow of the source gas through a first main flow controller unit in response to a change of a concentration of the precursor material in the source gas, introducing an auxiliary gas into the reactor, and controlling a gas flow of the auxiliary gas through a second main flow controller unit such that a total gas flow of the source gas and the auxiliary gas into the reactor is held constant when the gas flow of the source gas changes.

公开(公告)号：US20190252185A1

公开(公告)日：2019-08-15

申请号：US16272134

申请日：2019-02-11

Applicant: Infineon Technologies AG

Inventor： Olaf Fiedler ,  Daniel Kai Simon

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/448 ,  C23C16/24 ,  H01L21/687

CPC classification number: H01L21/02532 ,  C23C16/24 ,  C23C16/4481 ,  C23C16/52 ,  H01L21/0262 ,  H01L21/68714

Abstract: A method of forming a silicon layer includes introducing a source gas containing a precursor material and a carrier gas into a reactor, controlling a gas flow of the source gas through a first main flow controller unit in response to a change of a concentration of the precursor material in the source gas, introducing an auxiliary gas into the reactor, and controlling a gas flow of the auxiliary gas through a second main flow controller unit such that a total gas flow of the source gas and the auxiliary gas into the reactor is held constant when the gas flow of the source gas changes.

公开(公告)号：US11479854B2

公开(公告)日：2022-10-25

申请号：US16545872

申请日：2019-08-20

Applicant: Infineon Technologies AG

Inventor： Olaf Fiedler ,  Ullrich Hannemann ,  Andre Horn ,  Daniel Kai Simon ,  Sigurd Volker Zehner

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/453 ,  H01L21/02 ,  H01L21/285

Abstract: A method of depositing a layer includes measuring a physical property that is related to an air pressure in a reactor chamber of a deposition apparatus. A main gas mixture including a source gas and an auxiliary gas is introduced into the reactor chamber at atmospheric pressure, the source gas including a precursor material and a carrier gas. A gas flow of at least one of the source gas and the auxiliary gas into the reactor chamber is controlled in response to a change of the air pressure in the reactor chamber.

公开(公告)号：US20200063257A1

公开(公告)日：2020-02-27

申请号：US16545872

申请日：2019-08-20

Applicant: Infineon Technologies AG

Inventor： Olaf Fiedler ,  Ullrich Hannemann ,  Andre Horn ,  Daniel Kai Simon ,  Sigurd Volker Zehner

IPC: C23C16/453 ,  H01L21/285 ,  H01L21/768 ,  H01L21/02

Abstract: A method of depositing a layer includes measuring a physical property that is related to an air pressure in a reactor chamber of a deposition apparatus. A main gas mixture including a source gas and an auxiliary gas is introduced into the reactor chamber at atmospheric pressure, the source gas including a precursor material and a carrier gas. A gas flow of at least one of the source gas and the auxiliary gas into the reactor chamber is controlled in response to a change of the air pressure in the reactor chamber.