公开(公告)号：US11810958B2

公开(公告)日：2023-11-07

申请号：US17400213

申请日：2021-08-12

Applicant: Infineon Technologies AG

Inventor： Felix Buth ,  Margarete Deckers ,  Christian Feuerbaum ,  Uwe Schmalzbauer ,  Markus Zundel

IPC: H01L29/423 ,  H01L29/06 ,  H01L29/78 ,  H01L29/40

CPC classification number: H01L29/4236 ,  H01L29/0696 ,  H01L29/404 ,  H01L29/4238 ,  H01L29/7813

Abstract: A transistor includes: gate electrodes and field electrodes, wherein in each case one gate electrode and one field electrode are arranged one above another in a vertical direction in a common trench of a semiconductor body; a gate pad to which the gate electrodes are connected; and a source metallization arranged above the semiconductor body. The field electrodes of a first group include at least one contact section. The at least one contact section is arranged between two sections of a gate electrode arranged in the same trench and is connected to the source metallization. The two sections of the gate electrode are separated from one another in a region of the contact section. At least one of the two sections of the gate electrode arranged in the same trench is electrically connected to a gate electrode arranged in a further trench by way of a gate connecting electrode.