公开(公告)号：US12136670B2

公开(公告)日：2024-11-05

申请号：US17824198

申请日：2022-05-25

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Andreas Meiser ,  Hans-Peter Lang ,  Thorsten Meyer ,  Peter Irsigler

IPC: H01L21/74 ,  H01L21/02 ,  H01L21/762 ,  H01L21/8234 ,  H01L23/48 ,  H01L27/06 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78 ,  H01L29/861 ,  H01L29/40

Abstract: A method of manufacturing a semiconductor body includes forming a pattern at a first side of a substrate, forming a semiconductor layer on the first side of the substrate, attaching the substrate and the semiconductor layer to a carrier via a surface of the semiconductor layer, and removing the substrate from a second side opposite to the first side.

公开(公告)号：US20190157449A1

公开(公告)日：2019-05-23

申请号：US16235550

申请日：2018-12-28

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Andreas Meiser ,  Hans-Peter Lang ,  Thorsten Meyer ,  Peter Irsigler

IPC: H01L29/78 ,  H01L23/48 ,  H01L27/06 ,  H01L21/02 ,  H01L21/762 ,  H01L29/06 ,  H01L21/74 ,  H01L29/66 ,  H01L29/45 ,  H01L29/861 ,  H01L29/417 ,  H01L21/8234 ,  H01L29/423

Abstract: A semiconductor device includes a semiconductor body includes a first side and a second side opposite to the first side, a first dielectric disposed on the first side, a second dielectric disposed on the second side, one or more FET devices disposed at the first side, a first contact trench extending through the first dielectric at the first side, a first conductive material disposed in the first contact trench and electrically connected to the semiconductor body, a second contact trench extending through the second dielectric and into the semiconductor body at the second side, and a second conductive material disposed in the second contact trench and electrically connected to the semiconductor body at sidewalls of the second contact trench.

公开(公告)号：US20220285550A1

公开(公告)日：2022-09-08

申请号：US17824198

申请日：2022-05-25

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Andreas Meiser ,  Hans-Peter Lang ,  Thorsten Meyer ,  Peter Irsigler

IPC: H01L29/78 ,  H01L29/06 ,  H01L21/762 ,  H01L21/02 ,  H01L29/66 ,  H01L23/48 ,  H01L27/06 ,  H01L29/861 ,  H01L21/8234 ,  H01L29/417 ,  H01L29/45 ,  H01L21/74 ,  H01L29/423

Abstract: A method of manufacturing a semiconductor body includes forming a pattern at a first side of a substrate, forming a semiconductor layer on the first side of the substrate, attaching the substrate and the semiconductor layer to a carrier via a surface of the semiconductor layer, and removing the substrate from a second side opposite to the first side.

公开(公告)号：US20160197070A1

公开(公告)日：2016-07-07

申请号：US15051105

申请日：2016-02-23

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Andreas Meiser ,  Hans-Peter Lang ,  Thorsten Meyer ,  Peter Irsigler

IPC: H01L27/06 ,  H01L29/45 ,  H01L29/423 ,  H01L29/417 ,  H01L29/78 ,  H01L29/861

CPC classification number: H01L29/7813 ,  H01L21/02 ,  H01L21/743 ,  H01L21/762 ,  H01L21/76224 ,  H01L21/823418 ,  H01L21/823475 ,  H01L23/48 ,  H01L27/0629 ,  H01L27/0694 ,  H01L29/06 ,  H01L29/0657 ,  H01L29/407 ,  H01L29/417 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/456 ,  H01L29/66477 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/78 ,  H01L29/7803 ,  H01L29/7827 ,  H01L29/7845 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor body having first and second opposing sides. Contact trenches extend, from the first and second sides, through a dielectric and into the semiconductor body. The contact trenches include conductive material electrically connected to the semiconductor body via sidewalls. The contact trenches include a first contact trench extending through a first dielectric and into the semiconductor body at the first side, the first contact trench including a first conductive material electrically connected to the semiconductor body adjoining the first contact trench, a second contact trench extending through a second dielectric and into the semiconductor body at the second side, the second contact trench including a second conductive material, a first contact pattern surrounded by the first dielectric at the first side, and a second contact pattern surrounded by the second dielectric at the second side.

Abstract translation: 半导体器件包括具有第一和第二相对侧的半导体本体。 接触沟槽从第一侧和第二侧延伸穿过电介质并进入半导体本体。 接触沟槽包括通过侧壁电连接到半导体本体的导电材料。 接触沟槽包括延伸穿过第一电介质并在第一侧进入半导体本体的第一接触沟槽，第一接触沟槽包括电连接到邻接第一接触沟槽的半导体本体的第一导电材料，延伸穿过第二接触沟槽 第二电介质并且在第二侧进入半导体本体，第二接触沟槽包括第二导电材料，由第一侧面处的第一电介质围绕的第一接触图案和在第二侧被第二电介质包围的第二接触图案 侧。