公开(公告)号：US11916546B2

公开(公告)日：2024-02-27

申请号：US17185564

申请日：2021-02-25

Applicant: Infineon Technologies AG

Inventor： Semen Syroiezhin ,  Ivan Jevtic ,  Valentyn Solomko

IPC: H03K17/74 ,  H03K17/14 ,  H03K17/16 ,  H03K17/041 ,  H04B1/44

CPC classification number: H03K17/16 ,  H03K17/04106 ,  H03K17/74 ,  H03K17/145 ,  H03K2217/0054 ,  H03K2217/0081 ,  H04B1/44

Abstract: A radio frequency switch device includes a first transistor and a second transistor; a compensation network coupled between a body terminal of the first transistor and a source/drain terminal of the second transistor; and a bootstrapping network having a first terminal coupled to a first bias terminal, a second terminal coupled to a gate terminal of the first transistor, and a third terminal coupled to the body terminal of the first transistor, wherein the bootstrapping network establishes a low impedance path between the gate terminal and the body terminal of the first transistor in response to a first voltage value of the first bias terminal, and wherein the bootstrapping network establishes a high impedance path between the gate terminal and the body terminal of the first transistor in response to a second voltage value of the first bias terminal.

公开(公告)号：US20220271746A1

公开(公告)日：2022-08-25

申请号：US17185564

申请日：2021-02-25

Applicant: Infineon Technologies AG

Inventor： Semen Syroiezhin ,  Ivan Jevtic ,  Valentyn Solomko

IPC: H03K17/14 ,  H04B1/44

Abstract: A radio frequency switch device includes a first transistor and a second transistor; a compensation network coupled between a body terminal of the first transistor and a source/drain terminal of the second transistor; and a bootstrapping network having a first terminal coupled to a first bias terminal, a second terminal coupled to a gate terminal of the first transistor, and a third terminal coupled to the body terminal of the first transistor, wherein the bootstrapping network establishes a low impedance path between the gate terminal and the body terminal of the first transistor in response to a first voltage value of the first bias terminal, and wherein the bootstrapping network establishes a high impedance path between the gate terminal and the body terminal of the first transistor in response to a second voltage value of the first bias terminal.

公开(公告)号：US20240154610A1

公开(公告)日：2024-05-09

申请号：US18406982

申请日：2024-01-08

Applicant: Infineon Technologies AG

Inventor： Semen Syroiezhin ,  Valentyn Solomko ,  Ivan Jevtic

IPC: H03K17/16 ,  H03K17/041 ,  H03K17/74

CPC classification number: H03K17/16 ,  H03K17/04106 ,  H03K17/74 ,  H03K17/145

Abstract: A radio frequency switch device includes a first transistor and a second transistor; a compensation network coupled between a body terminal of the first transistor and a source/drain terminal of the second transistor; and a bootstrapping network having a first terminal coupled to a first bias terminal, a second terminal coupled to a gate terminal of the first transistor, and a third terminal coupled to the body terminal of the first transistor, wherein the bootstrapping network establishes a low impedance path between the gate terminal and the body terminal of the first transistor in response to a first voltage value of the first bias terminal, and wherein the bootstrapping network establishes a high impedance path between the gate terminal and the body terminal of the first transistor in response to a second voltage value of the first bias terminal.

公开(公告)号：US12278622B2

公开(公告)日：2025-04-15

申请号：US18406982

申请日：2024-01-08

Applicant: Infineon Technologies AG

Inventor： Semen Syroiezhin ,  Valentyn Solomko ,  Ivan Jevtic

IPC: H03K17/16 ,  H03K17/041 ,  H03K17/14 ,  H03K17/74 ,  H04B1/44

Abstract: A radio frequency switch device includes a first transistor and a second transistor; a compensation network coupled between a body terminal of the first transistor and a source/drain terminal of the second transistor; and a bootstrapping network having a first terminal coupled to a first bias terminal, a second terminal coupled to a gate terminal of the first transistor, and a third terminal coupled to the body terminal of the first transistor, wherein the bootstrapping network establishes a low impedance path between the gate terminal and the body terminal of the first transistor in response to a first voltage value of the first bias terminal, and wherein the bootstrapping network establishes a high impedance path between the gate terminal and the body terminal of the first transistor in response to a second voltage value of the first bias terminal.