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1.发明授权Semiconductor device having areas with different conductivity types and different doping concentrations 有权具有不同导电类型和掺杂浓度不同的区域的半导体器件公开(公告)号：US09306011B2
公开(公告)日：2016-04-05
申请号：US14049839
申请日：2013-10-09
Applicant: Infineon Technologies AG
Inventor： Markus Zundel , Thomas Schweinboeck , Jesper Wittborn , Erwin Bacher , Juergen Holzmueller , Hans-Joachim Schulze
IPC: H01L23/58 , H01L29/36 , H01L21/265 , H01L21/66 , H01L51/05 , H01L29/06 , H01L21/266
CPC classification number: H01L21/266 , H01L21/265 , H01L21/26513 , H01L21/26546 , H01L22/30 , H01L22/32 , H01L22/34 , H01L29/0692 , H01L29/36 , H01L51/0002 , H01L51/05
Abstract: A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes a plurality of first doping regions of a first doping structure arranged at a main surface of the semiconductor substrate and a plurality of second doping regions of the first doping structure arranged at the main surface of the semiconductor substrate. The first doping regions of the plurality of first doping regions of the first doping structure include dopants of a first conductivity type with different doping concentrations. Further, the second doping regions of the plurality of second doping regions of the first doping structure include dopants of a second conductivity type with different doping concentrations. At least one first doping region of the plurality of first doping regions of the first doping structure partly overlaps at least one second doping region of the plurality of second doping regions of the first doping structure causing an overlap region arranged at the main surface.
Abstract translation: 半导体器件包括半导体衬底。 半导体衬底包括布置在半导体衬底的主表面上的第一掺杂结构的多个第一掺杂区域和布置在半导体衬底的主表面处的第一掺杂结构的多个第二掺杂区域。 第一掺杂结构的多个第一掺杂区的第一掺杂区包括具有不同掺杂浓度的第一导电类型的掺杂剂。 此外，第一掺杂结构的多个第二掺杂区域的第二掺杂区域包括具有不同掺杂浓度的第二导电类型的掺杂剂。 第一掺杂结构的多个第一掺杂区域中的至少一个第一掺杂区域部分地与第一掺杂结构的多个第二掺杂区域中的至少一个第二掺杂区重叠，导致布置在主表面处的重叠区域。
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公开(公告)号：US09799521B2
公开(公告)日：2017-10-24
申请号：US15059783
申请日：2016-03-03
Applicant: Infineon Technologies AG
Inventor： Markus Zundel , Thomas Schweinboeck , Jesper Wittborn , Erwin Bacher , Juergen Holzmueller , Hans-Joachim Schulze
IPC: H01L51/40 , H01L21/266 , H01L21/265 , H01L21/66 , H01L29/36 , H01L51/05 , H01L29/06 , H01L51/00
CPC classification number: H01L21/266 , H01L21/265 , H01L21/26513 , H01L21/26546 , H01L22/30 , H01L22/32 , H01L22/34 , H01L29/0692 , H01L29/36 , H01L51/0002 , H01L51/05
Abstract: A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes a plurality of first doping regions of a first doping structure arranged at a main surface of the semiconductor substrate and a plurality of second doping regions of the first doping structure arranged at the main surface of the semiconductor substrate. The first doping regions of the plurality of first doping regions of the first doping structure include dopants of a first conductivity type with different doping concentrations. Further, the second doping regions of the plurality of second doping regions of the first doping structure include dopants of a second conductivity type with different doping concentrations. At least one first doping region of the plurality of first doping regions of the first doping structure partly overlaps at least one second doping region of the plurality of second doping regions of the first doping structure causing an overlap region arranged at the main surface.
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3.发明申请SEMICONDUCTOR DEVICE HAVING AREAS WITH DIFFERENT CONDUCTIVITY TYPES AND DIFFERENT DOPING 审中-公开具有不同导电类型和不同掺杂浓度的区域的半导体器件公开(公告)号：US20160189964A1
公开(公告)日：2016-06-30
申请号：US15059783
申请日：2016-03-03
Applicant: Infineon Technologies AG
Inventor： Markus Zundel , Thomas Schweinboeck , Jesper Wittborn , Erwin Bacher , Juergen Holzmueller , Hans-Joachim Schulze
IPC: H01L21/266 , H01L21/265 , H01L51/00
CPC classification number: H01L21/266 , H01L21/265 , H01L21/26513 , H01L21/26546 , H01L22/30 , H01L22/32 , H01L22/34 , H01L29/0692 , H01L29/36 , H01L51/0002 , H01L51/05
Abstract: A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes a plurality of first doping regions of a first doping structure arranged at a main surface of the semiconductor substrate and a plurality of second doping regions of the first doping structure arranged at the main surface of the semiconductor substrate. The first doping regions of the plurality of first doping regions of the first doping structure include dopants of a first conductivity type with different doping concentrations. Further, the second doping regions of the plurality of second doping regions of the first doping structure include dopants of a second conductivity type with different doping concentrations. At least one first doping region of the plurality of first doping regions of the first doping structure partly overlaps at least one second doping region of the plurality of second doping regions of the first doping structure causing an overlap region arranged at the main surface.
Abstract translation: 半导体器件包括半导体衬底。 半导体衬底包括布置在半导体衬底的主表面上的第一掺杂结构的多个第一掺杂区域和布置在半导体衬底的主表面处的第一掺杂结构的多个第二掺杂区域。 第一掺杂结构的多个第一掺杂区的第一掺杂区包括具有不同掺杂浓度的第一导电类型的掺杂剂。 此外，第一掺杂结构的多个第二掺杂区域的第二掺杂区域包括具有不同掺杂浓度的第二导电类型的掺杂剂。 第一掺杂结构的多个第一掺杂区域中的至少一个第一掺杂区域部分地与第一掺杂结构的多个第二掺杂区域中的至少一个第二掺杂区重叠，导致布置在主表面处的重叠区域。
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公开(公告)号：US20150097184A1
公开(公告)日：2015-04-09
申请号：US14049839
申请日：2013-10-09
Applicant: Infineon Technologies AG
Inventor： Markus Zundel , Thomas Schweinboeck , Jesper Wittborn , Erwin Bacher , Juergen Holzmueller , Hans-Joachim Schulze
IPC: H01L29/36 , H01L51/05 , H01L21/265 , H01L21/66
CPC classification number: H01L21/266 , H01L21/265 , H01L21/26513 , H01L21/26546 , H01L22/30 , H01L22/32 , H01L22/34 , H01L29/0692 , H01L29/36 , H01L51/0002 , H01L51/05
Abstract: A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes a plurality of first doping regions of a first doping structure arranged at a main surface of the semiconductor substrate and a plurality of second doping regions of the first doping structure arranged at the main surface of the semiconductor substrate. The first doping regions of the plurality of first doping regions of the first doping structure include dopants of a first conductivity type with different doping concentrations. Further, the second doping regions of the plurality of second doping regions of the first doping structure include dopants of a second conductivity type with different doping concentrations. At least one first doping region of the plurality of first doping regions of the first doping structure partly overlaps at least one second doping region of the plurality of second doping regions of the first doping structure causing an overlap region arranged at the main surface.
Abstract translation: 半导体器件包括半导体衬底。 半导体衬底包括布置在半导体衬底的主表面上的第一掺杂结构的多个第一掺杂区域和布置在半导体衬底的主表面处的第一掺杂结构的多个第二掺杂区域。 第一掺杂结构的多个第一掺杂区的第一掺杂区包括具有不同掺杂浓度的第一导电类型的掺杂剂。 此外，第一掺杂结构的多个第二掺杂区域的第二掺杂区域包括具有不同掺杂浓度的第二导电类型的掺杂剂。 第一掺杂结构的多个第一掺杂区域中的至少一个第一掺杂区域部分地与第一掺杂结构的多个第二掺杂区域中的至少一个第二掺杂区重叠，导致布置在主表面处的重叠区域。
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