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公开(公告)号：US09165889B2
公开(公告)日：2015-10-20
申请号：US13931396
申请日：2013-06-28
Applicant: Infineon Technologies AG
Inventor： Joerg Ortner , Josef Campidell , Andreas Greiner
IPC: H01L23/544
CPC classification number: H01L23/544 , H01L2223/54406 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
Abstract: An alignment mark definer is configured to provide a geometrical definition for an actual alignment structure to be formed at a temporary surface of a substrate based on a desired appearance of the alignment mark and on an expected alteration of an appearance of the actual alignment structure caused by a deposition material deposited on the temporary surface and the actual alignment structure.
Abstract translation: 对准标记定义器被配置为基于对准标记的期望外观以及由于对准标记的期望外观而导致的实际对准结构的外观提供要在基板的临时表面处形成的实际对准结构的几何定义 沉积在临时表面上的沉积材料和实际对准结构。
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2.发明申请PHOTOLITHOGRAPHY MASK, PHOTOLITHOGRAPHY MASK ARRANGEMENT, AND METHOD FOR EXPOSING A WAFER 审中-公开光刻胶片，曝光掩模布局和曝光方法公开(公告)号：US20140106264A1
公开(公告)日：2014-04-17
申请号：US13834267
申请日：2013-03-15
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Josef Campidell , Rainer Leuschner , Gottfried Seebacher
CPC classification number: G03F7/20 , G03F1/50 , G03F7/70733
Abstract: A photolithography mask according to an embodiment may include: a mask substrate, the mask substrate having a three-dimensional pattern located and dimensioned to at least partially receive an inverse three-dimensional pattern of a wafer to be exposed using the photolithography mask.
Abstract translation: 根据一个实施例的光刻掩模可以包括：掩模基板，所述掩模基板具有三维图案，所述三维图案的位置和尺寸被设计成至少部分地使用所述光刻掩模接收待曝光的晶片的反三维图案。
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公开(公告)号：US20150000149A1
公开(公告)日：2015-01-01
申请号：US13931396
申请日：2013-06-28
Applicant: Infineon Technologies AG
Inventor： Joerg Ortner , Josef Campidell , Andreas Greiner
IPC: H01L23/544 , G01B5/25
CPC classification number: H01L23/544 , H01L2223/54406 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
Abstract: An alignment mark definer is configured to provide a geometrical definition for an actual alignment structure to be formed at a temporary surface of a substrate based on a desired appearance of the alignment mark and on an expected alteration of an appearance of the actual alignment structure caused by a deposition material deposited on the temporary surface and the actual alignment structure.
Abstract translation: 对准标记定义器被配置为基于对准标记的期望外观以及由于对准标记的期望外观而导致的实际对准结构的外观提供要在基板的临时表面处形成的实际对准结构的几何定义 沉积在临时表面上的沉积材料和实际对准结构。
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