公开(公告)号：US10361096B2

公开(公告)日：2019-07-23

申请号：US15677091

申请日：2017-08-15

Applicant: Infineon Technologies AG

Inventor： Mathias Plappert ,  Stefan Krivec ,  Andreas Riegler ,  Karin Schrettlinger

IPC: H01L21/3215 ,  H01L23/00 ,  H01L21/768 ,  H01L23/31 ,  H01L23/29 ,  H01L29/66 ,  H01L29/739 ,  H01L29/40 ,  H01L29/06 ,  H01L29/417 ,  H01L29/74

Abstract: In various embodiments, a method is provided. The method includes forming a metallization layer above at least one first region of a substrate. After forming the metallization layer at least one second region of the substrate is free of the metallization layer. The method further includes forming a barrier layer above the at least one first region of the substrate and above the at least one second region of the substrate. The barrier layer in the at least one first region of the substrate directly adjoins the metallization layer. The method further includes removing the barrier layer in the at least one first region of the substrate by drive-in of the barrier layer into the metallization layer.

公开(公告)号：US20180053663A1

公开(公告)日：2018-02-22

申请号：US15677091

申请日：2017-08-15

Applicant: Infineon Technologies AG

Inventor： Mathias Plappert ,  Stefan Krivec ,  Andreas Riegler ,  Karin Schrettlinger

IPC: H01L21/3215 ,  H01L23/29 ,  H01L29/739 ,  H01L29/66 ,  H01L29/06 ,  H01L23/31

CPC classification number: H01L21/32155 ,  H01L21/76886 ,  H01L23/293 ,  H01L23/298 ,  H01L23/3171 ,  H01L23/3192 ,  H01L24/03 ,  H01L29/0619 ,  H01L29/401 ,  H01L29/417 ,  H01L29/41716 ,  H01L29/66325 ,  H01L29/7393 ,  H01L29/7436

Abstract: In various embodiments, a method is provided. The method includes forming a metallization layer above at least one first region of a substrate. After forming the metallization layer at least one second region of the substrate is free of the metallization layer. The method further includes forming a barrier layer above the at least one first region of the substrate and above the at least one second region of the substrate. The barrier layer in the at least one first region of the substrate directly adjoins the metallization layer. The method further includes removing the barrier layer in the at least one first region of the substrate by drive-in of the barrier layer into the metallization layer.