公开(公告)号：US20240404903A1

公开(公告)日：2024-12-05

申请号：US18203954

申请日：2023-05-31

Applicant: Infineon Technologies AG

Inventor： Anita Herzer ,  Markus Wiesemann

IPC: H01L23/31 ,  H01L23/00 ,  H01L23/29 ,  H01L23/498 ,  H01L25/07

Abstract: A semiconductor module includes a power electronics carrier including a metallization layer disposed on an electrically insulating substrate, a power semiconductor die mounted on the power electronics carrier, a housing that surrounds an interior volume over the power electronics carrier, an electrically insulating encapsulant within the interior volume that encapsulates the power semiconductor die, wherein the electrically insulating encapsulant is configured to transform during operation of the power semiconductor die such that a liquified envelope of the electrically insulating encapsulant surrounds the power semiconductor die and such that a solid outer region of the electrically insulating encapsulant surrounds the liquified envelope.

公开(公告)号：US20250062170A1

公开(公告)日：2025-02-20

申请号：US18797721

申请日：2024-08-08

Applicant: Infineon Technologies AG

Inventor： Markus Wiesemann ,  Anita Herzer

IPC: H01L23/29 ,  H01L21/56 ,  H01L23/31

Abstract: A power semiconductor module arrangement includes: a substrate arranged in or forming a ground surface of a housing having sidewalls; at least one semiconductor body arranged on the substrate; a first layer partly filling the housing and completely covering the substrate and the at least one semiconductor body arranged thereon; and a second layer arranged adjacent to the first layer. The first layer is a liquid or gel-like layer. The second layer is a solid or gel-like layer. The first layer is arranged between the substrate and the second layer. The second layer is arranged distant from a top of the housing.

公开(公告)号：US20240413025A1

公开(公告)日：2024-12-12

申请号：US18732716

申请日：2024-06-04

Applicant: Infineon Technologies AG

Inventor： Georg Troska ,  Anita Herzer ,  Fabian Jäger ,  Markus Wiesemann

IPC: H01L23/10 ,  H01L21/48 ,  H01L21/56 ,  H01L23/053 ,  H01L23/31 ,  H01L23/373

Abstract: A method includes applying a first material to a first surface, the first material including a matrix material and an adhesion promoter. The matrix material is configured to cure when heated to a defined temperature for a defined period of time. The adhesion promoter is configured to be activated when heated to a temperature that is higher than the defined temperature and/or for a period of time that is longer than the defined period of time. The method further includes heating the first material to the defined temperature for the defined period of time such that the matrix material cures and the adhesion promoter remains inactive, thereby forming a pre-seal.

公开(公告)号：US20250062137A1

公开(公告)日：2025-02-20

申请号：US18797564

申请日：2024-08-08

Applicant: Infineon Technologies AG

Inventor： Markus Wiesemann ,  Anita Herzer

IPC: H01L21/56 ,  H01L23/29 ,  H01L23/31

Abstract: A method includes: filling a first material having a first density in a housing to form a liquid or gel-like first pre-layer, the housing having sidewalls, and a substrate with at least one semiconductor body arranged thereon is arranged in or forms a ground surface of the housing, the first pre-layer partly filling the housing and completely covering the substrate and the at least one semiconductor body; filling a second material being different from the first material and having a second density in the housing, the first density being higher than the second density, to form a liquid or gel-like second pre-layer, the first pre-layer forming between the second pre-layer and the substrate; and performing a curing step that simultaneously cures the first material and the second material and forms a solid first layer and a solid second layer, the second layer permanently adhering to the first layer.