公开(公告)号：US20240154020A1

公开(公告)日：2024-05-09

申请号：US18500635

申请日：2023-11-02

Applicant: Infineon Technologies AG

Inventor： Benedikt Stoib ,  Hans-Joachim Schulze ,  Marten Müller ,  Daniel Schlögl ,  Moriz Jelinek ,  Holger Schulze

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/861

CPC classification number: H01L29/66136 ,  H01L29/0615 ,  H01L29/8611

Abstract: A semiconductor device includes a semiconductor body having first and second opposite surfaces along a vertical direction, and an active diode area. The active diode area includes: a p-doped anode region adjoining the first surface; an n-doped drift region between the anode region and the second surface; an n-doped cathode contact region adjoining the second surface; a p-doped injection region adjoining the second surface and the cathode contact region; and a p-doped auxiliary region between the drift region and the cathode contact region. The auxiliary region includes first and second sub-regions. In a top view, the first sub-region covers at least part of the injection region and the second sub-region covers at least part of the cathode contact region. In the top view, the auxiliary region includes a plurality of openings covering from 0.1% to an 20% of a surface area of the active diode area at the second surface.

公开(公告)号：US10262993B2

公开(公告)日：2019-04-16

申请号：US15043476

申请日：2016-02-12

Applicant: Infineon Technologies AG

Inventor： Marten Müller ,  Hans-Günter Eckel

IPC: H01L27/07 ,  H01L29/861

Abstract: A semiconductor device includes a first transistor structure including a first transistor body region of a first conductivity type located within a semiconductor substrate. At least part of the first transistor body region is located between a first source/drain region of the first transistor structure and a second source/drain region of the first transistor structure. The semiconductor device includes a second transistor structure including a second transistor body region of a second conductivity type located within the semiconductor substrate. At least part of the second transistor body region is located between a first source/drain region of the second transistor structure and a second source/drain region of the second transistor structure. At least part of the second source/drain region of the second transistor structure is located between a doping region comprising the second source/drain region of the first transistor structure and the second transistor body region.

公开(公告)号：US20160240644A1

公开(公告)日：2016-08-18

申请号：US15043476

申请日：2016-02-12

Applicant: Infineon Technologies AG

Inventor： Marten Müller ,  Hans-Guenter Eckel

IPC: H01L29/74 ,  H01L29/66

CPC classification number: H01L27/0727 ,  H01L29/8611 ,  H01L29/8613

Abstract: A semiconductor device includes a first transistor structure including a first transistor body region of a first conductivity type located within a semiconductor substrate. At least part of the first transistor body region is located between a first source/drain region of the first transistor structure and a second source/drain region of the first transistor structure. The semiconductor device includes a second transistor structure including a second transistor body region of a second conductivity type located within the semiconductor substrate. At least part of the second transistor body region is located between a first source/drain region of the second transistor structure and a second source/drain region of the second transistor structure. At least part of the second source/drain region of the second transistor structure is located between a doping region comprising the second source/drain region of the first transistor structure and the second transistor body region.

Abstract translation: 半导体器件包括第一晶体管结构，其包括位于半导体衬底内的第一导电类型的第一晶体管本体区域。 第一晶体管体区域的至少一部分位于第一晶体管结构的第一源极/漏极区域和第一晶体管结构的第二源极/漏极区域之间。 半导体器件包括第二晶体管结构，其包括位于半导体衬底内的第二导电类型的第二晶体管本体区域。 第二晶体管体区域的至少一部分位于第二晶体管结构的第一源极/漏极区域和第二晶体管结构的第二源极/漏极区域之间。 第二晶体管结构的第二源极/漏极区域的至少一部分位于包括第一晶体管结构的第二源/漏区域和第二晶体管本体区域的掺杂区域之间。