公开(公告)号：US20230160732A1

公开(公告)日：2023-05-25

申请号：US18065394

申请日：2022-12-13

Applicant: Infineon Technologies AG

Inventor： Martin Seidl ,  Christian Bretthauer ,  Wolfgang Klein ,  Ulrich Krumbein ,  David Tumpold

IPC: G01F1/688 ,  G01F1/86

CPC classification number: G01F1/6888 ,  G01F1/86

Abstract: A thermoresistive micro sensor device includes a semiconductor chip; a through hole, which runs through the semiconductor chip from an upper side to a lower side; electrically conductive structures, wherein the middle section of each of the electrically conductive structures spans over the through hole at the upper side of the semiconductor chip; an electrically insulating arrangement for electrically insulating the electrically conductive structures and the semiconductor chip from each other, wherein the through hole runs through the electrically insulating arrangement; and a contact arrangement including contacts, wherein each of the contacts is electrically connected to one of the first end sections or one of the second end sections, so that electrical energy is fed to at least one of the electrically conductive structures to heat the respective electrically conductive structure, and so that an electrical resistance of one of the electrically conductive structures is measured at the contact arrangement.

公开(公告)号：US12196589B2

公开(公告)日：2025-01-14

申请号：US18065394

申请日：2022-12-13

Applicant: Infineon Technologies AG

Inventor： Martin Seidl ,  Christian Bretthauer ,  Wolfgang Klein ,  Ulrich Krumbein ,  David Tumpold

IPC: G01F1/86 ,  G01F1/688

Abstract: A thermoresistive micro sensor device includes a semiconductor chip; a through hole, which runs through the semiconductor chip from an upper side to a lower side; electrically conductive structures, wherein the middle section of each of the electrically conductive structures spans over the through hole at the upper side of the semiconductor chip; an electrically insulating arrangement for electrically insulating the electrically conductive structures and the semiconductor chip from each other, wherein the through hole runs through the electrically insulating arrangement; and a contact arrangement including contacts, wherein each of the contacts is electrically connected to one of the first end sections or one of the second end sections, so that electrical energy is fed to at least one of the electrically conductive structures to heat the respective electrically conductive structure, and so that an electrical resistance of one of the electrically conductive structures is measured at the contact arrangement.

公开(公告)号：US11835041B2

公开(公告)日：2023-12-05

申请号：US16922530

申请日：2020-07-07

Applicant: Infineon Technologies AG

Inventor： Martin Seidl ,  Alfons Dehe ,  Daniel Fruechtl ,  Wolfgang Klein ,  Ulrich Krumbein ,  Johann Strasser ,  Matthias Vobl

IPC: F04B53/10 ,  F04B43/04 ,  F16K99/00

CPC classification number: F04B53/1047 ,  F04B43/046 ,  F16K99/0015 ,  F16K2099/0094

Abstract: A MEMS pump includes a basis structure, a membrane structure opposing the basis structure and being deflectable parallel to a surface normal of the basis structure and includes a pump chamber between the basis structure and the membrane structure wherein a volume of the pump chamber is based on a position of the membrane structure with respect to the basis structure. The MEMS pump includes a passage for letting a fluid pass into the pump chamber or exit the pump chamber, wherein the passage is arranged in-plane with respect to the pump chamber. The MEMS pump includes a valve structure coupled to the passage for connecting, in a first state, the passage to a first outer volume and for connecting, in a second state, the passage to a second outer volume.

公开(公告)号：US20210040942A1

公开(公告)日：2021-02-11

申请号：US16922530

申请日：2020-07-07

Applicant: Infineon Technologies AG

Inventor： Martin Seidl ,  Alfons Dehe ,  Daniel Fruechtl ,  Wolfgang Klein ,  Ulrich Krumbein ,  Johann Strasser ,  Matthias Vobl

IPC: F04B43/04 ,  F04B53/10

Abstract: A MEMS pump includes a basis structure, a membrane structure opposing the basis structure and being deflectable parallel to a surface normal of the basis structure and includes a pump chamber between the basis structure and the membrane structure wherein a volume of the pump chamber is based on a position of the membrane structure with respect to the basis structure. The MEMS pump includes a passage for letting a fluid pass into the pump chamber or exit the pump chamber, wherein the passage is arranged in-plane with respect to the pump chamber. The MEMS pump includes a valve structure coupled to the passage for connecting, in a first state, the passage to a first outer volume and for connecting, in a second state, the passage to a second outer volume.