公开(公告)号：US20200373163A1

公开(公告)日：2020-11-26

申请号：US16877855

申请日：2020-05-19

Applicant: Infineon Technologies AG

Inventor： Joerg Ortner ,  Marcel Heller ,  Dieter Kaiser ,  Nicolo Morgana ,  Jens Schneider

IPC: H01L21/266 ,  H01L21/265 ,  H01L29/78

Abstract: A method of implanting an implant species into a substrate at different depths is described. The method includes forming an implant mask over the substrate. The implant mask includes a first implant zone designed as an opening and a second implant zone designed as a block array. The implant species is implanted through the implant mask under an implant angle tilted against a block plane, such that a first implant area is formed by the implant species at a first depth in the substrate beneath the first implant zone and a second implant area is formed by the implant species at a second depth in the substrate beneath the second implant zone. The first depth is greater than the second depth.

公开(公告)号：US11640908B2

公开(公告)日：2023-05-02

申请号：US16877855

申请日：2020-05-19

Applicant: Infineon Technologies AG

Inventor： Joerg Ortner ,  Marcel Heller ,  Dieter Kaiser ,  Nicolo Morgana ,  Jens Schneider

IPC: H01L21/266 ,  H01L21/265 ,  H01L29/78

Abstract: A method of implanting an implant species into a substrate at different depths is described. The method includes forming an implant mask over the substrate. The implant mask includes a first implant zone designed as an opening and a second implant zone designed as a block array. The implant species is implanted through the implant mask under an implant angle tilted against a block plane, such that a first implant area is formed by the implant species at a first depth in the substrate beneath the first implant zone and a second implant area is formed by the implant species at a second depth in the substrate beneath the second implant zone. The first depth is greater than the second depth.