公开(公告)号：US20240188226A1

公开(公告)日：2024-06-06

申请号：US18503138

申请日：2023-11-06

Applicant: Innolux Corporation

Inventor： Wei-Lun Shieh ,  Ying-Jen Chen ,  Hang-Lang Lee

IPC: H05K3/40 ,  H05K1/11 ,  H05K3/10

CPC classification number: H05K3/4046 ,  H05K1/115 ,  H05K3/105 ,  H05K2201/10234 ,  H05K2203/1105 ,  H05K2203/1121

Abstract: A manufacturing method of an electronic device including the following steps is provided. First, a first conductive layer is formed on a substrate. Next, a first insulating layer and a second conductive layer are formed on the first conductive layer. The first insulating layer is disposed between the second conductive layer and the first conductive layer, and the first insulating layer has a via exposing a part of the first conductive layer. An aspect ratio of the via of the first insulating layer is greater than 1, and at least part of a sidewall of the first insulating layer is covered by the second conductive layer.

公开(公告)号：US11217884B2

公开(公告)日：2022-01-04

申请号：US16904646

申请日：2020-06-18

Applicant: InnoLux Corporation

Inventor： Hang-Lang Lee ,  I-Yin Li ,  Tang-Chin Hung ,  Pei-Chi Chen

IPC: H01Q1/38 ,  H03C7/02

Abstract: A radiation device includes: a first substrate; a second substrate; a dielectric layer disposed between the first substrate and the second substrate; and a film layer structure disposed on the first substrate. The resistivity of the film layer structure is between 108 and 5×1014 Ω-cm. Therefore, frequency modulation range of radiation signals of the radiation device can be increased.