公开(公告)号：US20240295823A1

公开(公告)日：2024-09-05

申请号：US18662967

申请日：2024-05-13

Applicant: Innolux Corporation

Inventor： Chun-Yuan Chuang ,  Ming-Chih Chen ,  Jean Huang ,  Wei-Jen Wang ,  Tao-Lung Cheng

IPC: G03F7/40 ,  G03F7/16 ,  H01L21/027 ,  H01L21/308

CPC classification number: G03F7/40 ,  G03F7/168 ,  H01L21/0274 ,  H01L21/3086

Abstract: A method for manufacturing an electronic device is provided. In the method for manufacturing an electronic device, a substrate is provided, a device layer is disposed on the substrate, and a photoresist layer is disposed on the device layer. Next, a photo mask is disposed on the photoresist layer, and a light source is used to firstly illuminate the photo mask to form a first exposure region. After that, a relative movement is made between the substrate and the photo mask, and the light source is used to secondly illuminate the photo mask to form a second exposure region, wherein the first exposure region partially overlaps the second exposure region. Afterwards, a pattern is developed on the substrate, the device layer is etched using a patterned photoresist layer as an etching mask, and then the patterned photoresist layer is removed.

公开(公告)号：US20210063889A1

公开(公告)日：2021-03-04

申请号：US16908658

申请日：2020-06-22

Applicant: Innolux Corporation

Inventor： Chun-Yuan Chuang ,  Ming-Chih Chen ,  Jean Huang ,  Wei-Jen Wang ,  Tao-Lung Cheng

IPC: G03F7/40 ,  G03F7/16 ,  H01L21/027 ,  H01L21/308

Abstract: A method for manufacturing an electronic device is provided. In the method for manufacturing an electronic device, a substrate is provided, a device layer is disposed on the substrate, and a photoresist layer is disposed on the device layer. Next, a photo mask is disposed on the photoresist layer, and a light source is used to firstly illuminate the photo mask to form a first exposure region. After that, a relative movement is made between the substrate and the photo mask, and the light source is used to secondly illuminate the photo mask to form a second exposure region, wherein the first exposure region partially overlaps the second exposure region. Afterwards, a pattern is developed on the substrate, the device layer is etched using a patterned photoresist layer as an etching mask, and then the patterned photoresist layer is removed.