METHOD TO ACHIEVE TILTED PATTERNING WITH A THROUGH RESIST THICKNESS

    公开(公告)号:US20200064738A1

    公开(公告)日:2020-02-27

    申请号:US16111056

    申请日:2018-08-23

    Abstract: Embodiments disclosed herein include a lithographic patterning system and methods of using such a system to form a microelectronic device. In an embodiment, the lithographic patterning system includes an actinic radiation source, a stage where a major surface of the stage is for supporting a substrate with a resist layer, and a first prism over the stage, where the first prism comprises a first face that is substantially parallel to the major surface of the stage. In an embodiment, the lithographic patterning system further comprises a second prism, where the second prism comprises a first surface that is substantially parallel to a second surface of the first prism, and where a second surface of the second prism has a reflective coating.

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