公开(公告)号：US10885963B2

公开(公告)日：2021-01-05

申请号：US16221175

申请日：2018-12-14

Applicant: Intel Corporation

Inventor： Dmitri Nikonov ,  Ilya Karpov ,  Ian Young

IPC: G11C11/22 ,  H01L27/1159 ,  G06N3/02 ,  G11C11/54

Abstract: An embodiment includes an apparatus comprising: a first layer and a second layer; a first gate including first gate portions and a second gate including second gate portions; wherein the first layer: (a) is monolithic, (b) is between the first gate portions and is also between the second gate portions, and (c) includes a semiconductor material; wherein the second layer: (a) is between the first layer and at least one of the first gate portions and is also between the first layer and at least one of the second gate portions, and (b) includes oxygen and at least one of hafnium, silicon, yttrium, zirconium, barium, titanium, lead, or combinations thereof; wherein (a) a first plane intersects the first gate portions and the first and second layers, and (b) a second plane intersects the second gate portions and the first and second layers. Other embodiments are described herein.

公开(公告)号：US20220130820A1

公开(公告)日：2022-04-28

申请号：US17572437

申请日：2022-01-10

Applicant: Intel Corporation

Inventor： Prashant Majhi ,  Ilya Karpov ,  Brian Doyle ,  Ravi Pillarisetty ,  Abhishek Sharma

IPC: H01L27/02 ,  H01L29/861

Abstract: A backend electrostatic discharge (ESD) diode device structure is presented comprising: a first structure comprising a first material, wherein the first material includes metal; a second structure adjacent to the first structure, wherein the second structure comprises a second material, wherein the second material includes a semiconductor or an oxide; and a third structure adjacent to the second structure, wherein the third structure comprises the first material, wherein the second structure is between the first and third structures.

公开(公告)号：US11222885B2

公开(公告)日：2022-01-11

申请号：US15940899

申请日：2018-03-29

Applicant: Intel Corporation

Inventor： Prashant Majhi ,  Ilya Karpov ,  Brian Doyle ,  Ravi Pillarisetty ,  Abhishek Sharma

IPC: H01L27/02 ,  H01L29/861

Abstract: A backend electrostatic discharge (ESD) diode device structure is presented comprising: a first structure comprising a first material, wherein the first material includes metal; a second structure adjacent to the first structure, wherein the second structure comprises a second material, wherein the second material includes a semiconductor or an oxide; and a third structure adjacent to the second structure, wherein the third structure comprises of the first material, wherein the second structure is between the first and third structures. Other embodiments are also disclosed and claimed.

公开(公告)号：US11094358B2

公开(公告)日：2021-08-17

申请号：US16319239

申请日：2016-09-30

Applicant: Intel Corporation

Inventor： Ilya Karpov ,  Yih Wang ,  Fatih Hamzaoglu ,  James Clarke

IPC: H01L21/02 ,  G11C11/00 ,  G11C11/22 ,  G11C11/407 ,  H01L27/108 ,  H01L27/11514 ,  H01L27/11507 ,  G11C11/401

Abstract: An apparatus is described. The apparatus includes a semiconductor chip that includes logic circuitry, embedded dynamic random access memory (DRAM) cells and embedded ferroelectric random access memory (FeRAM) cells.

公开(公告)号：US20190304963A1

公开(公告)日：2019-10-03

申请号：US15940899

申请日：2018-03-29

Applicant: Intel Corporation

Inventor： Prashant Majhi ,  Ilya Karpov ,  Brian Doyle ,  Ravi Pillarisetty ,  Abhishek Sharma

IPC: H01L27/02 ,  H01L29/861

Abstract: A backend electrostatic discharge (ESD) diode device structure is presented comprising: a first structure comprising a first material, wherein the first material includes metal; a second structure adjacent to the first structure, wherein the second structure comprises a second material, wherein the second material includes a semiconductor or an oxide; and a third structure adjacent to the second structure, wherein the third structure comprises of the first material, wherein the second structure is between the first and third structures. Other embodiments are also disclosed and claimed.

公开(公告)号：US12302643B2

公开(公告)日：2025-05-13

申请号：US17572437

申请日：2022-01-10

Applicant: Intel Corporation

Inventor： Prashant Majhi ,  Ilya Karpov ,  Brian Doyle ,  Ravi Pillarisetty ,  Abhishek Sharma

IPC: H10D89/60 ,  H10D8/00

Abstract: A backend electrostatic discharge (ESD) diode device structure is presented comprising: a first structure comprising a first material, wherein the first material includes metal; a second structure adjacent to the first structure, wherein the second structure comprises a second material, wherein the second material includes a semiconductor or an oxide; and a third structure adjacent to the second structure, wherein the third structure comprises the first material, wherein the second structure is between the first and third structures.