公开(公告)号：US11973105B2

公开(公告)日：2024-04-30

申请号：US16145111

申请日：2018-09-27

Applicant: Intel Corporation

Inventor： Chieh-Jen Ku ,  Bernhard Sell ,  Leif Paulson ,  Kinyip Phoa ,  Shi Liu

IPC: H01L23/522 ,  H01L27/01 ,  H01L49/02

CPC classification number: H01L28/24 ,  H01L23/5228 ,  H01L27/016

Abstract: An integrated circuit structure comprises at least one metal gate formed in a first dielectric layer, the at least one metal gate comprising a workfunction layer and the gate oxide layer along sidewalls of the first dielectric layer. A field effect (FE) dielectric layer dielectric layer is above the first dielectric layer of the at least one metal gate. A precision resistor comprising a thin-film metallic material is formed on the FE dielectric layer above the at least one metal gate and extending laterally over the at least one metal gate.