公开(公告)号：US12302763B1

公开(公告)日：2025-05-13

申请号：US17695717

申请日：2022-03-15

Applicant: Intel Corporation

Inventor： Matthew Jon Curry ,  Hubert C. George ,  James S. Clarke

IPC: H10N60/10 ,  G06N10/00 ,  G06N10/40 ,  H01L29/66 ,  H03K17/92 ,  H10D48/00 ,  H10N69/00

Abstract: Quantum dot devices with multiple barrier gates between adjacent plunger gates are disclosed. Multiple barrier gates between two adjacent plunger gates are coupled to respective signal sources and may be individually controlled by signals being applied to one or more of the multiple barrier gates to control electrostatics so that the potential barrier between quantum dots formed under adjacent plunger gates may be adjusted. Appropriate signals are to be applied to two or more of the multiple barrier gates between a pair of adjacent plunger gates in order to realize sufficient coupling of quantum dots. Such quantum dot devices provide strong spatial localization of the quantum dots, good control over quantum dot interactions and manipulation, good scalability in the number of quantum dots included in the device, and/or design flexibility in making electrical connections to the quantum dot devices to integrate the quantum dot devices in larger computing devices.