公开(公告)号：US20250113586A1

公开(公告)日：2025-04-03

申请号：US18374929

申请日：2023-09-29

Applicant: Intel Corporation

Inventor： Rahul PANDEY ,  Yang CAO ,  Rahul RAMAMURTHY ,  Jubin NATHAWAT ,  Michael L. HATTENDORF ,  Jae HUR ,  Anant H. JAHAGIRDAR ,  Steven R. NOVAK ,  Tao CHU ,  Yanbin LUO ,  Minwoo JANG ,  Paul A. PACKAN ,  Owen Y. LOH ,  David J. TOWNER

IPC: H01L29/51 ,  H01L21/3115 ,  H01L29/40 ,  H01L29/78

Abstract: An integrated circuit structure comprises a fin extending from a substrate, the fin comprising source and drain regions, and a channel region between the source and drain regions. A multilayer high-k gate stack comprising a plurality of materials extends conformally over the fin over the channel region. A gate electrode is over and on a topmost material in the multilayer high-k gate stack. Fluorine is implanted in the substrate beneath the multilayer high-k gate stack or in the plurality of materials comprising the multilayer high-k gate stack.

公开(公告)号：US20230131126A1

公开(公告)日：2023-04-27

申请号：US18088469

申请日：2022-12-23

Applicant: Intel Corporation

Inventor： Szuya S. LIAO ,  Rahul PANDEY ,  Rishabh MEHANDRU ,  Anupama BOWONDER ,  Pratik PATEL

IPC: H01L29/78 ,  H01L29/66 ,  H01L27/088 ,  H01L29/08

Abstract: Fin shaping, and integrated circuit structures resulting therefrom, are described. For example, an integrated circuit structure includes a semiconductor fin having a protruding fin portion above an isolation structure above a substrate. The protruding fin portion has substantially vertical upper sidewalls and outwardly tapered lower sidewalls. A gate stack is over and conformal with the protruding fin portion of the semiconductor fin. A first source or drain region is at a first side of the gate stack, and a second source or drain region is at a second side of the gate stack opposite the first side of the gate stack.

公开(公告)号：US20210167209A1

公开(公告)日：2021-06-03

申请号：US16700431

申请日：2019-12-02

Applicant: Intel Corporation

Inventor： Szuya S. LIAO ,  Rahul PANDEY ,  Rishabh MEHANDRU ,  Anupama BOWONDER ,  Pratik PATEL

IPC: H01L29/78 ,  H01L29/08 ,  H01L27/088 ,  H01L29/66

Abstract: Fin shaping, and integrated circuit structures resulting therefrom, are described. For example, an integrated circuit structure includes a semiconductor fin having a protruding fin portion above an isolation structure above a substrate. The protruding fin portion has substantially vertical upper sidewalls and outwardly tapered lower sidewalls. A gate stack is over and conformal with the protruding fin portion of the semiconductor fin. A first source or drain region is at a first side of the gate stack, and a second source or drain region is at a second side of the gate stack opposite the first side of the gate stack.