公开(公告)号：US20200219861A1

公开(公告)日：2020-07-09

申请号：US16647451

申请日：2017-12-28

Applicant: Intel Corporation

Inventor： Telesphor KAMGAING ,  Vijay K. NAIR ,  Feras EID ,  Georgios C. DOGIAMIS ,  Johanna M. SWAN ,  Stephan LEUSCHNER

IPC: H01L25/16 ,  H01L23/498 ,  H01L23/24 ,  H03H9/17 ,  H03H9/05

Abstract: RF front end systems or modules with an acoustic wave resonator (AWR) on an interposer substrate are described. In an example, an integrated system includes an active die, the active die comprising a semiconductor substrate having a plurality of active circuits therein. An interposer is also included, the interposer comprising an acoustic wave resonator (AWR). A seal frame couples the active die to the interposer, the seal frame surrounding the acoustic wave resonator and hermetically sealing the acoustic wave resonator between the active die and the interposer.

公开(公告)号：US20200227545A1

公开(公告)日：2020-07-16

申请号：US16651327

申请日：2017-09-28

Applicant: Intel Corporation

Inventor： Han Wui THEN ,  Stephan LEUSCHNER ,  Marko RADOSAVLJEVIC ,  Sansaptak DASGUPTA

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/423 ,  H01L21/765 ,  H01L21/285 ,  H01L29/66 ,  H03F3/45 ,  H03F3/21

Abstract: Gallium nitride (GaN) transistors with source and drain field plates are described. In an example, a transistor includes a gallium nitride (GaN) layer above a substrate, a gate structure over the GaN layer, a source region on a first side of the gate structure, a drain region on a second side of the gate structure, the second side opposite the first side, a source field plate above the source region, and a drain field plate above the drain region.

公开(公告)号：US20200227544A1

公开(公告)日：2020-07-16

申请号：US16651326

申请日：2017-09-28

Applicant: Intel Corporation

Inventor： Han Wui THEN ,  Stephan LEUSCHNER ,  Marko RADOSAVLJEVIC ,  Sansaptak DASGUPTA

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/423 ,  H01L21/765 ,  H01L21/285 ,  H01L29/66 ,  H03F3/21 ,  H03F3/45

Abstract: Gallium nitride (GaN) transistors with drain field plates and their methods of fabrication are described. In an example, a transistor includes a gallium nitride (GaN) layer above a substrate, a gate structure over the GaN layer, a source region on a first side of the gate structure, a drain region on a second side of the gate structure, the second side opposite the first side, and a drain field plate above the drain region, wherein the drain field plate is not electrically coupled to the gate structure or the source region.