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公开(公告)号:US20170249250A1
公开(公告)日:2017-08-31
申请号:US15457847
申请日:2017-03-13
Applicant: Intel Corporation
Inventor: Raj K. RAMANUJAN , Rajat AGARWAL , Kai CHENG , Taarinya POLEPEDDI , Camille C. RAAD , David J. ZIMMERMAN , Muthukumar P. SWAMINATHAN , Dimitrios ZIAKAS , Mohan J. KUMAR , Bassam N. COURY , Glenn J. HINTON
IPC: G06F12/0811 , G11C11/406 , G06F12/0895 , G06F12/0897 , G11C14/00
CPC classification number: G06F12/0811 , G06F12/0895 , G06F12/0897 , G06F2212/2024 , G06F2212/205 , G11C11/40615 , G11C14/009 , Y02D10/13
Abstract: A system and method are described for integrating a memory and storage hierarchy including a non-volatile memory tier within a computer system. In one embodiment, PCMS memory devices are used as one tier in the hierarchy, sometimes referred to as “far memory.” Higher performance memory devices such as DRAM placed in front of the far memory and are used to mask some of the performance limitations of the far memory. These higher performance memory devices are referred to as “near memory.”
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公开(公告)号:US20170249266A1
公开(公告)日:2017-08-31
申请号:US15482542
申请日:2017-04-07
Applicant: Intel Corporation
Inventor: Bill NALE , Raj K. RAMANUJAN , Muthukuman P. SWAMINATHAN , Tessil THOMAS , Taarinya POLEPEDDI
CPC classification number: G06F13/1694 , G06F9/467 , G06F11/1064 , G06F12/0238 , G06F12/0802 , G06F12/0804 , G06F12/0811 , G06F12/0868 , G06F12/0897 , G06F13/1668 , G06F13/4068 , G06F13/42 , G06F13/4234 , G06F2212/1008 , G06F2212/1016 , G06F2212/1044 , G06F2212/2024 , G06F2212/7203 , Y02D10/13 , Y02D10/14 , Y02D10/151
Abstract: A semiconductor chip comprising memory controller circuitry having interface circuitry to couple to a memory channel. The memory controller includes first logic circuitry to implement a first memory channel protocol on the memory channel. The first memory channel protocol is specific to a first volatile system memory technology. The interface also includes second logic circuitry to implement a second memory channel protocol on the memory channel. The second memory channel protocol is specific to a second non volatile system memory technology. The second memory channel protocol is a transactional protocol
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公开(公告)号:US20190220406A1
公开(公告)日:2019-07-18
申请号:US16363992
申请日:2019-03-25
Applicant: Intel Corporation
Inventor: Raj K. RAMANUJAN , Rajat AGARWAL , Kai CHENG , Taarinya POLEPEDDI , Camille C. RAAD , David J. ZIMMERMAN , Muthukumar P. SWAMINATHAN , Dimitrios ZIAKAS , Mohan J. KUMAR , Bassam N. COURY , Glenn J. HINTON
IPC: G06F12/0811 , G06F12/0895 , G06F12/0897 , G11C11/406 , G11C14/00
Abstract: A system and method are described for integrating a memory and storage hierarchy including a non-volatile memory tier within a computer system. In one embodiment, PCMS memory devices are used as one tier in the hierarchy, sometimes referred to as “far memory.” Higher performance memory devices such as DRAM placed in front of the far memory and are used to mask some of the performance limitations of the far memory. These higher performance memory devices are referred to as “near memory.”
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公开(公告)号:US20190018809A1
公开(公告)日:2019-01-17
申请号:US16046587
申请日:2018-07-26
Applicant: Intel Corporation
Inventor: Bill NALE , Raj K. RAMANUJAN , Muthukumar P. SWAMINATHAN , Tessil THOMAS , Taarinya POLEPEDDI
IPC: G06F13/16 , G06F13/40 , G06F13/42 , G06F9/46 , G06F11/10 , G06F12/02 , G06F12/0868 , G06F12/0804 , G06F12/0897 , G06F12/0802 , G06F12/0811
Abstract: A semiconductor chip comprising memory controller circuitry having interface circuitry to couple to a memory channel. The memory controller includes first logic circuitry to implement a first memory channel protocol on the memory channel. The first memory channel protocol is specific to a first volatile system memory technology. The interface also includes second logic circuitry to implement a second memory channel protocol on the memory channel. The second memory channel protocol is specific to a second non volatile system memory technology. The second memory channel protocol is a transactional protocol
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